Zobrazeno 1 - 10
of 26
pro vyhledávání: '"K. D. Rahner"'
Autor:
S. Burger, L. R. Danielson, E. Brown, G. Nichols, Christine A. Wang, P. F. Baldasaro, H. Ehsani, W.F. Topper, G. C. Taylor, Michael K. Connors, K. D. Rahner, Ramon U. Martinelli, S. Anikeev, D.M. Depoy, Z. Shellenbarger, M. W. Dashiell, D. Donetski, J Beausang, Jizhong Li, Serge Luryi, Gregory Belenky, Robin K. Huang, P. Talamo, George W. Turner, P. Fourspring
Publikováno v:
IEEE Transactions on Electron Devices. 53:2879-2891
InxGa1-xAsySb1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are
Autor:
K. D. Rahner, W.F. Topper, Jizhong Li, J. F. Beausang, G. Belenky, Michael K. Connors, L. R. Danielson, J. Azarkevich, S. Burger, G. Nichols, R. Marinelli, H. Ehsani, J. Hazel, P. Talamo, S. Luryi, George W. Turner, P. Fourspring, D. R. Taylor, G. Taylor, R. K. Huang, D. DePoy, E. Brown, S. Anikeev, P. F. Baldasaro, D. Donetski, Z. Shellenbarger, M. W. Dashiell, C. A. Wang
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00eecf067003cecfda9f58d841f18d5
https://doi.org/10.2172/837459
https://doi.org/10.2172/837459
Autor:
C. A. Wang, R. K. Huang, G. Taylor, P. Talamo, K. D. Rahner, H. Ehsani, W.F. Topper, J. Hazel, G. Nichols, G. Belenky, E. Brown, Z. Shellenbarger, M. W. Dashiell, D. R. Taylor, J. F. Beausang, George W. Turner, J. Azarkevich, P. F. Baldasaro, P. Fourspring, D. Donetski, D. DePoy, S. Anikeev, Michael K. Connors, L. R. Danielson, S. Luryi, Ramon U. Martinelli, Jizhong Li, S. Burger
Publikováno v:
AIP Conference Proceedings.
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice‐matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm2 multi‐chip diode modules with front‐surface spectral filters were tested in a
Autor:
K. D. Rahner, L. R. Danielson, P. Fourspring, JL Vell, S. Burger, E. Brown, P. F. Baldasaro, Jane E. Oppenlander, M. W. Dashiell
Publikováno v:
AIP Conference Proceedings.
TPV technology has advanced rapidly in the last five years, with diode conversion efficiency approaching >30%, and filter efficiency of {approx}80%. These achievements have enabled repeatable testing of 20% efficient small systems, demonstrating the
Publikováno v:
Chemical Engineering & Technology. Sep2022, Vol. 45 Issue 9, p1559-1570. 12p.
Publikováno v:
Journal of Renewable & Sustainable Energy; May2023, Vol. 15 Issue 3, p1-13, 13p
Autor:
Lee, Hui Jing, Gamel, Mansur Mohammed Ali, Ker, Pin Jern, Jamaludin, Md Zaini, Wong, Yew Hoong, David, John P. R.
Publikováno v:
Journal of Electronic Materials; Nov2022, Vol. 51 Issue 11, p6082-6107, 26p
Autor:
Reina, Manuel1,2 mreina@ub.edu, Espel, Enric1,2 eespel@ub.edu
Publikováno v:
Cancers. Nov2017, Vol. 9 Issue 11, p153. 14p.
Autor:
Sarabandi, Kamal, Choi, Sangjo
Publikováno v:
Journal of Applied Physics; Dec2013, Vol. 114 Issue 21, p214303, 8p
Autor:
Zhang, Chao, Liao, Zhenghai, Tang, Liangliang, Liu, Zhuming, Huo, Rongling, Wang, Zhiping, Qiu, Kuanrong
Publikováno v:
Applied Physics Letters; 5/13/2019, Vol. 114 Issue 19, pN.PAG-N.PAG, 5p, 1 Color Photograph, 1 Diagram, 5 Graphs