Zobrazeno 1 - 7
of 7
pro vyhledávání: '"K. D. Matthews"'
Autor:
L.F. Eastman, William J. Schaff, Wladek Walukiewicz, Xiaodong Chen, Joel W. Ager, D. Hao, Kin Man Yu, K. D. Matthews
Publikováno v:
International Journal of High Speed Electronics and Systems. 19:113-119
Plasma-assisted molecular beam epitaxial growth of Mg -doped GaN and InGaN on a sapphire substrate is investigated in this study. Electrical characteristics of p -type GaN strongly depend on the flux of Mg acceptors and the growth temperature. Only t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32ad75a87daa552e30fbf946118ae2ae
https://doi.org/10.1142/s0129156409006151
https://doi.org/10.1142/s0129156409006151
Autor:
Hai Lu, Lester F. Eastman, K. D. Matthews, Clara Ji-Hyun Cho, William J. Schaff, Troy Richards, D. Hao, Ho-Young Cha, Xiaodong Chen
Publikováno v:
physica status solidi (b). 245:868-872
The electrical properties of InGaN that is either undoped, or Mg doped, are compared to learn about the nature of p-type conductivity. For In alloy fraction beyond 5% Hall measurements do not indicate p-type polarity, even when Mg doping is employed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c72b53f5c187510808cfdcb1cb6d44
https://doi.org/10.1002/pssb.200778710
https://doi.org/10.1002/pssb.200778710
Publikováno v:
physica status solidi c. 5:1863-1865
We report on the growth of high quality Mg-doped InGaN and InAlN alloys on (0001) sapphire substrates by molecular beam epitaxy. Phase separation does not occur in InxGa1-xN films with Indium content up to 0.88. Hall measurement shows that a hole con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39f1ac71c9d48937e6a4a39073e76bb
https://doi.org/10.1002/pssc.200778707
https://doi.org/10.1002/pssc.200778707
Autor:
D. Hao, Wladek Walukiewicz, Lester F. Eastman, William J. Schaff, Xiaodong Chen, K. D. Matthews, Joel W. Ager, Kin Man Yu
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
In x Ga 1-x N and In x Al 1-x N alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7×1017 cm−3 is achieved on Mg-doped In 0.04 Ga 0.96 N. When x≫0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e938505afb2f4319f3c38224bc576e21
https://doi.org/10.1109/pvsc.2008.4922690
https://doi.org/10.1109/pvsc.2008.4922690
Autor:
William R. Barr, K. D. Matthews
Publikováno v:
Journal of the Hydraulics Division. 88:197-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5efde1b5f6860931b6668b07a7208aa
https://doi.org/10.1061/jyceaj.0000808
https://doi.org/10.1061/jyceaj.0000808
Autor:
K. D. Matthews, John Barron
Publikováno v:
The Classical World. 59:193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c43dcc3c285ae1d7d6ff57e2e5a2d521
https://doi.org/10.2307/4345898
https://doi.org/10.2307/4345898