Zobrazeno 1 - 10
of 13
pro vyhledávání: '"K. D. Childs"'
Publikováno v:
Meat Science. 62:79-84
A glial fibrillary acidic protein (GFAP) fluorescent enzyme linked immunosorbant assay (ELISA) was compared with an ELISA test kit for GFAP to determine the level of central nervous system (CNS) tissue in advanced meat recovery (AMR) products. The te
Publikováno v:
Journal of Food Protection. 64:2047-2052
We report the development and validation of a fluorescent enzyme-linked immunosorbent assay (ELISA) for glial fibrillary acidic protein (GFAP), which can be used as a rapid and sensitive method to detect CNS tissue in meat products. The fluorometric
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2913-2920
Interfacial strength of Cr/polyimide thin film structures and its durability to thermal exposure as a function of process variables was determined by 90° peel testing. Results were correlated with surface and interfacial characterization of thin fil
Molecular characterization of Escherichia coli O157:H7 hide contamination routes: feedlot to harvest
Autor:
R. A. Bowling, J. Stefanek, B. Centrella, D. J. Vote, W. Warren-Serna, John A. Scanga, Gary C. Smith, John R. Ruby, John N. Sofos, C. A. Simpson, Keith E. Belk, T. Choat, K. D. Childs, G. Bellenger
Publikováno v:
Journal of food protection. 69(6)
This study was conducted to identify the origin of Escherichia coli O157:H7 contamination on steer hides at the time of harvest. Samples were collected from the feedlot, transport trailers, and packing plant holding pens and from the colons and hides
Publikováno v:
Journal of Applied Physics. 62:3288-3294
Thermally stable, low‐resistance ohmic contacts on n‐type GaAs are required to fabricate high‐speed GaAs integrated circuits. MoGeW contacts prepared by annealing at high temperature around 800 °C in an InAs overpressure are attractive, becaus
Publikováno v:
Journal of Applied Physics. 64:1974-1982
Improvement in thermally stable, low‐resistance ohmic contacts to n‐type GaAs is reported for GeInW and NiInW contact metals. Coevaporation of In with Ge or In with Ni reduced the contact resistances by a factor of about 2 compared with those of
Autor:
Max G. Lagally, K. D. Childs
Publikováno v:
Physical Review B. 30:5742-5752
Auger line-shape measurements have been made to extract the variation in the local charge distribution around Ga and As sites for chemisorption of oxygen on cleaved and sputter-etched GaAs(110). A significant variation with changing oxygen coverage i
Publikováno v:
Journal of Physics C: Solid State Physics. 14:L243-L246
Photoemission cross sections of the valence states of MoS2 are investigated in the photon energy range 30 to 150 eV using synchrotron radiation. Modulations of emission intensities are observed which are attributed to two effects of atomic origin: co
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:593-596
Changes in the local charge distributions around the Ga and As atoms are measured as a function of coverage for CO, C, and sequential C and O adsorption on cleaved GaAs(110), using Auger line shape analysis. The charge distribution at the Ga sites is
Autor:
Alessandro C. Callegari, H. J. Hovel, Masanori Murakami, Yih‐Cheng Shih, C. C. Parks, E. L. Wilkie, K. D. Childs
Publikováno v:
Journal of Applied Physics. 64:2113-2121
To investigate the effects of microstructure of the Schottky characteristics of WSix contacts to n‐type GaAs, cross‐sectional transmission electron microscopy, x‐ray diffraction, and secondary‐ion mass spectrometry have been used to study the