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pro vyhledávání: '"K. D. Bole"'
Publikováno v:
Microelectronics Reliability. 68:13-20
The reliability of commercial-off-the-shelf (COTS) GaN HEMTs was studied after irradiation using heavy ions of Neon (Ne), Silicon (Si), and Argon (Ar). Devices were exposed to heavy ions at a flux of ~ 1.8e4 ions/cm2-sec to a fluence of 1.5e5 ions/cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03bb87112a1f9b5ff3daf951095351d4
https://doi.org/10.1016/j.microrel.2016.09.017
https://doi.org/10.1016/j.microrel.2016.09.017
