Zobrazeno 1 - 10
of 65
pro vyhledávání: '"K. Cico"'
Autor:
Nicolas Grandjean, Martin Kuball, Dagmar Gregušová, M. Tapajna, K. Cico, Jean-François Carlin, Jan Kuzmik, N. Killat, Vassil Palankovski
Publikováno v:
IEEE Transactions on Electron Devices. 61:2793-2801
Hot-electron temperature (T-e) in InAlN/GaN high-electron-mobility transistors (HEMTs) was determined using electroluminescence spectroscopy as a function of gate voltage and correlated with the Te distribution determined by hydrodynamic simulations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9f63399c5dcd855f9874a0055dfcb02
https://doi.org/10.1109/ted.2014.2332235
https://doi.org/10.1109/ted.2014.2332235
Autor:
Sylvain Delage, M. Jurkovič, A. Alexewicz, Dionyz Pogany, Dagmar Gregušová, Karol Fröhlich, Jan Kuzmik, M.-A. di Forte Poisson, K. Cico, Gottfried Strasser
Publikováno v:
Solid-State Electronics. 67:74-78
We report on preparation and electrical characterization of InAlN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors (MOS HEMTs) with Al2O3 gate insulation and surface passivation. About 12 nm thin high-κ dielectric film was de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa7c6b190cd5cb0f82d9155165940ab3
https://doi.org/10.1016/j.sse.2011.09.002
https://doi.org/10.1016/j.sse.2011.09.002
Autor:
Jean-François Carlin, Karol Fröhlich, Ján Šoltýs, Jan Kuzmik, Dagmar Gregušová, Nicolas Grandjean, Š. Gaži, Dionýz Pogany, K. Cico
Publikováno v:
physica status solidi c. 7:108-111
In this article, we optimized the ohmic contact processing in InAlN/GaN high electron mobility transistors for the lower temperature of annealing by recessing of metalliza-tion to approach the 2DEG at the InAlN/GaN interface. The ohmic contacts which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86e5a1443ddf21cf864dd4ac26823bdc
https://doi.org/10.1002/pssc.200982640
https://doi.org/10.1002/pssc.200982640
Publikováno v:
Semiconductor Science and Technology. 22:947-951
AlGaN/GaN metal?oxide?semiconductor heterostructure field-effect transistors (MOSHFETs) with 4 nm thick Al2O3 gate oxide were prepared and their performance was compared with that of AlGaN/GaN HFETs. The MOSHFETs yielded ~40% increase of the saturati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::605270eda9a200ce8cb0f5ee74c85513
https://doi.org/10.1088/0268-1242/22/8/021
https://doi.org/10.1088/0268-1242/22/8/021
Autor:
Jozef Novák, Roman Stoklas, Peter Kordos, Dagmar Gregušová, K. Cico, M. Marso, G. Heidelberger
Publikováno v:
physica status solidi c. 4:2720-2723
We report on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with MOCVD deposited Al2O3 as a gate oxide. Properties of MOSHFETs with 9 nm and 14 nm thick Al2O3 are compared with conventional HFETs prepared simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7898fb6723ecd5c41c64e6cb8b229798
https://doi.org/10.1002/pssc.200674828
https://doi.org/10.1002/pssc.200674828
Autor:
K. Cico, Jan Kuzmik, K. Fröhlich, T. Lalinský, Alexandros Georgakilas, R. Stoklas, Dionyz Pogany, Dagmar Gregušová
Publikováno v:
Microelectronics Reliability. 47:790-793
We investigate electrical properties of Ni/Al2O3/GaN metal–oxide–semiconductor (MOS) structures having different pre-treatment of GaN surface by O2, Ar and NH3, combined with various temperature of annealing. MOS and reference Ni/GaN Schottky con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0617eb25a353f5c3524da0b136ac287
https://doi.org/10.1016/j.microrel.2007.01.010
https://doi.org/10.1016/j.microrel.2007.01.010
Autor:
A. Abrutis, Kristína Hušeková, Juan P. Espinós, Alica Rosová, K. Cico, Mindaugas Lukosius, R. Luptak, Edmund Dobročka, P. Pisecny, Karol Fröhlich
Publikováno v:
Materials Science in Semiconductor Processing. 9:1065-1072
We have prepared rare earth oxides based MOSFET gate stacks using metal-organic chemical vapour deposition, MOCVD. Gd2O3, La2O3, Nd2O3 and Pr6O11 films with thickness 3–20 nm were deposited on silicon substrate at 500 °C. The films were characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d64ec17beeab1823c8b9e0a9467cb3
https://doi.org/10.1016/j.mssp.2006.10.025
https://doi.org/10.1016/j.mssp.2006.10.025
Autor:
Jan Kuzmik, Nicolas Grandjean, K. Cico, M. Jurkovič, S. Hascik, Karol Fröhlich, Vassil Palankovski, Dagmar Gregušová, J.-F. Carlin, M. Blaho
Publikováno v:
IEEE Electron Device Letters. 34:432-434
A Schottky-barrier normally off InAlN-based high-electron-mobility transistor (HEMT) with selectively etched access regions, high off-state breakdown, and low gate leakage is presented. Metal-organic chemical vapor deposition-grown 1-nm InAlN/1-nm Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a2afc0d2f56c6f8633797907f59374
https://doi.org/10.1109/led.2013.2241388
https://doi.org/10.1109/led.2013.2241388
Publikováno v:
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9247c0e538174fa656779a58a35e263
https://doi.org/10.1109/asdam.2014.6998696
https://doi.org/10.1109/asdam.2014.6998696
Autor:
M. Blaho, K. Cico, Roman Stoklas, Peter Kordos, Jozef Novák, Karol Fröhlich, Dagmar Gregušová
Publikováno v:
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.
The gate leakage reduction about four to seven orders of magnitude for HfO 2 MOSHFETs (~10−10A/mm at −15V) prepared by Atomic Layer Deposition (ALD) technique at 350°C with and without oxygen-plasma treatment in comparison to HFET, was observed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec80933d73ba38715f1bc0f071442433
https://doi.org/10.1109/asdam.2014.6998664
https://doi.org/10.1109/asdam.2014.6998664