Zobrazeno 1 - 10
of 26
pro vyhledávání: '"K. C. Zeng"'
Autor:
C. Ignatiev, J. Y. Lin, C. H. Wei, K. C. Zeng, D. N. Braski, James H. Edgar, Hongxing Jiang, Z. Y. Xie, Jharna Chaudhuri
Publikováno v:
Journal of Electronic Materials. 29:452-456
BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 1000°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. The presence of boron was detected by Auger scanning microprobe, the shift of the (00.2) x-ray d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615a4c6a86281964be54bcaa502de010
https://doi.org/10.1007/s11664-000-0160-y
https://doi.org/10.1007/s11664-000-0160-y
Autor:
Jingyu Lin, D. N. Braski, K. C. Zeng, Hongxing Jiang, C. Ignatiev, Z. Y. Xie, C. H. Wei, James H. Edgar, J. Chaudhuri
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:429-434
Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c198aae24dbd5404607e339d4ee10ee
https://doi.org/10.1557/s1092578300002842
https://doi.org/10.1557/s1092578300002842
Publikováno v:
Applied Physics Letters. 76:3040-3042
A set of GaN/AlxGa1−xN(x≈0.2) multiple quantum wells (MQWs) with well widths, Lw, varying from 6 to 48 A has been grown by metalorganic chemical vapor deposition under the optimal GaN-like growth conditions. Picosecond time-resolved photoluminesc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb154de639b917b44decb5e3dfe77efa
https://doi.org/10.1063/1.126572
https://doi.org/10.1063/1.126572
Publikováno v:
Applied Physics Letters. 75:2563-2565
Microrings of varying sizes have been fabricated from InxGa1−xN/GaN (x∼0.15) multiple quantum wells (MQWs). Photolithography and dry etching techniques including both ion-beam and inductively coupled plasma etching were employed to pattern the II
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad675a3ceb8db3db77151e766f7fb680
https://doi.org/10.1063/1.125078
https://doi.org/10.1063/1.125078
Publikováno v:
Applied Physics Letters. 75:763-765
An array of GaN hexagonal pyramids with a side length of 8.0 μm was fabricated by selective epitaxial overgrowth. These microsized pyramids are highly efficient microcavities. Three types of optical resonance modes with mode spacings of 10, 5.0, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5accca5d7bea67e0f0d90b5ece73107
https://doi.org/10.1063/1.124505
https://doi.org/10.1063/1.124505
Publikováno v:
Applied Physics Letters. 74:3821-3823
Picosecond time-resolved photoluminescence (PL) spectroscopy has been used to investigate the optical properties of an insulating GaN epilayer grown by metalorganic chemical vapor deposition on a sapphire substrate. Two emission lines at 3.503 and 3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c1bbec3b0e44958aea269c09e76ca1
https://doi.org/10.1063/1.124191
https://doi.org/10.1063/1.124191
Publikováno v:
Applied Physics Letters. 74:1227-1229
Picosecond time-resolved photoluminescence (PL) spectroscopy has been used to investigate the optical properties of GaN pyramids overgrown on hexagonal-patterned GaN(0001) epilayers on sapphire and silicon substrates with AlN buffer layers. We found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1602e219b95cb666599620606b95f877
https://doi.org/10.1063/1.123507
https://doi.org/10.1063/1.123507
Publikováno v:
Applied Physics Letters. 73:2476-2478
Time-resolved photoluminescence (PL) spectroscopy was used to investigate carrier distributions in a GaN/AlGaN multiple quantum well (MQW) sample under high excitation intensities necessary to achieve lasing threshold. Room temperature PL spectra sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0090af3dda4ac37e3575e9f34bb9f8a1
https://doi.org/10.1063/1.122487
https://doi.org/10.1063/1.122487
Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells
Publikováno v:
Applied Physics Letters. 73:1724-1726
The collective effects of alloy disorder and interface roughness on optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) have been studied. The results are compared with those of GaN/AlGaN MQWs and InGaN epilayers. InxGa1−xN/GaN MQWs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b68144512d867ff76656f8153f87ba31
https://doi.org/10.1063/1.122258
https://doi.org/10.1063/1.122258
Autor:
Muhammad Asif Khan, Lun Dai, R. A. Mair, A. Botchkarev, K. C. Zeng, Hadis Morkoç, Hongxing Jiang, B. R. Zhang, Jingyu Lin, Wook Kim
Publikováno v:
Applied Physics Letters. 72:1530-1532
Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 A/50 A GaN/AlxGa1−xN(x∼0.07) and 45 A/45 A InxGa1−xN/GaN(x∼0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diamete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3598d1c31224de6a804f6152ce026728
https://doi.org/10.1063/1.120573
https://doi.org/10.1063/1.120573