Zobrazeno 1 - 7
of 7
pro vyhledávání: '"K. C. Saraswat"'
Autor:
R. Islam, S. Qin, S. Deshmukh, Z. Yu, C. Köroğlu, A. I. Khan, K. Schauble, K. C. Saraswat, E. Pop, H.-S. P. Wong
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of HfOx-based conventional RRAM often yields only two stable memory state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb3c3e627f98a48fbb4a298a4fe076c2
http://arxiv.org/abs/2203.12190
http://arxiv.org/abs/2203.12190
Autor:
Verma, S., Bersuker, G., Gilmer, D. C., Padovani, Andrea, Park, H., Nainani, A., Huang, J., Parat, K., Kirsch, P. D., Larcher, Luca, Tseng, H. H., Jammy, K. C. Saraswat R.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3674::b487b1ec76b485da924170dd9050230a
https://hdl.handle.net/11380/655653
https://hdl.handle.net/11380/655653
Publikováno v:
ECS Meeting Abstracts. :1796-1796
The relentless device scaling paradigm is being threatened by the limits of Cu-based interconnects including excessive power dissipation, insufficient communication bandwidth, and signal latency. Many of these limitations are caused by the increase i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a8e21d5c4d7ab23d3f4059c3fcae9e
https://doi.org/10.1149/ma2014-02/35/1796
https://doi.org/10.1149/ma2014-02/35/1796
Autor:
M. Mazhar IslamRaja, A. J. Bariya, K. C. Saraswat, M.A. Cappelli, J.P. McVittie, L. Moberly, R. Lahri
Publikováno v:
30th International Reliability Physics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43a2e874e4dd27c391ce9f40a99eca0d
https://doi.org/10.1109/irps.1992.363264
https://doi.org/10.1109/irps.1992.363264
Publikováno v:
Journal of Applied Physics. 58:2416-2419
A process utilizing a microwave discharge technique for performing direct nitridation of silicon at a relatively low growth temperature of no more than about 500° C. in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-contain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aef8d520f13d63204a2ba8a2b271f2f2
https://doi.org/10.1063/1.335915
https://doi.org/10.1063/1.335915
Publikováno v:
Indian journal of experimental biology. 18(3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::24f6e4e5a67f10fad4da66f90f628480
https://pubmed.ncbi.nlm.nih.gov/6248457
https://pubmed.ncbi.nlm.nih.gov/6248457
Publikováno v:
Indian journal of experimental biology. 10(6)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::446bf519ce0184adee47cf04816c2727
https://pubmed.ncbi.nlm.nih.gov/4353100
https://pubmed.ncbi.nlm.nih.gov/4353100