Zobrazeno 1 - 10
of 5 423
pro vyhledávání: '"K. C. Saraswat"'
Autor:
R. Islam, S. Qin, S. Deshmukh, Z. Yu, C. Köroğlu, A. I. Khan, K. Schauble, K. C. Saraswat, E. Pop, H.-S. P. Wong
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of HfOx-based conventional RRAM often yields only two stable memory state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb3c3e627f98a48fbb4a298a4fe076c2
http://arxiv.org/abs/2203.12190
http://arxiv.org/abs/2203.12190
Autor:
Liu, Lin1,2 (AUTHOR), Dou, Yingying1 (AUTHOR), Wang, Junhua1 (AUTHOR), Zhao, Yan1 (AUTHOR), Kong, Wenwen1 (AUTHOR), Ma, Chaoyan1 (AUTHOR) macy@ms.xjb.ac.cn, He, Donglin1 (AUTHOR), Wang, Hongguang1 (AUTHOR), Zhang, Huimin1 (AUTHOR) zhanghm@ms.xjb.ac.cn, Chang, Aimin1 (AUTHOR) changam@ms.xjb.ac.cn, Zhao, Pengjun1 (AUTHOR) zhaopj@ms.xjb.ac.cn
Publikováno v:
Advanced Science. 9/25/2024, Vol. 11 Issue 36, p1-33. 33p.
Autor:
Fu, Xiaqing1 (AUTHOR), Liu, Zhifang2 (AUTHOR) lzf@bit.edu.cn, Wang, Huaipeng3 (AUTHOR), Xie, Dan3 (AUTHOR) xiedan@tsinghua.edu.cn, Sun, Yilin2 (AUTHOR) sunyl@bit.edu.cn
Publikováno v:
Advanced Science. 9/4/2024, Vol. 11 Issue 33, p1-28. 28p.
Autor:
Sui, Nianzi1,2 (AUTHOR), Ji, Yixi3 (AUTHOR), Li, Min1,2 (AUTHOR), Zheng, Fanyuan4 (AUTHOR), Shao, Shuangshuang1,2 (AUTHOR), Li, Jiaqi1,2 (AUTHOR), Liu, Zhaoxin3 (AUTHOR), Wu, Jinjian3 (AUTHOR) jinjian.wu@mail.xidian.edu.cn, Zhao, Jianwen1,2 (AUTHOR) jwzhao2011@sinano.ac.cn, Li, Lain‐Jong4 (AUTHOR) lanceli1@hku.hk
Publikováno v:
Advanced Science. 8/7/2024, Vol. 11 Issue 29, p1-12. 12p.
Autor:
Verma, S., Bersuker, G., Gilmer, D. C., Padovani, Andrea, Park, H., Nainani, A., Huang, J., Parat, K., Kirsch, P. D., Larcher, Luca, Tseng, H. H., Jammy, K. C. Saraswat R.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3674::b487b1ec76b485da924170dd9050230a
https://hdl.handle.net/11380/655653
https://hdl.handle.net/11380/655653
Publikováno v:
ECS Meeting Abstracts. :1796-1796
The relentless device scaling paradigm is being threatened by the limits of Cu-based interconnects including excessive power dissipation, insufficient communication bandwidth, and signal latency. Many of these limitations are caused by the increase i
Autor:
Vu, Van Tu1 (AUTHOR) tu.vuvan@skku.edu, Nguyen, Minh Chien1 (AUTHOR), Kim, Whan Kyun2,3 (AUTHOR), Do, Van Dam1 (AUTHOR), Dat, Vu Khac4 (AUTHOR), Yu, Woo Jong1 (AUTHOR) micco21@skku.edu
Publikováno v:
Small Structures. May2024, Vol. 5 Issue 5, p1-10. 10p.
Autor:
Xu, Hang1 (AUTHOR), Xue, Yue1,2 (AUTHOR), Liu, Zhenqi1,3 (AUTHOR), Tang, Qing1 (AUTHOR), Wang, Tianyi2 (AUTHOR), Gao, Xichan2 (AUTHOR), Qi, Yaping2,4 (AUTHOR) qi.yaping.a2@tohoku.ac.jp, Chen, Yong P.2,4,5,6 (AUTHOR) yongchen@purdue.edu, Ma, Chunlan1 (AUTHOR) wlxmcl@mail.usts.edu.cn, Jiang, Yucheng1 (AUTHOR) jyc@usts.edu.cn
Publikováno v:
Small Science. Apr2024, Vol. 4 Issue 4, p1-45. 45p.
Autor:
M. Mazhar IslamRaja, A. J. Bariya, K. C. Saraswat, M.A. Cappelli, J.P. McVittie, L. Moberly, R. Lahri
Publikováno v:
30th International Reliability Physics Symposium.
Autor:
Shen, Ying-Chun1,2,3 (AUTHOR), Wu, Bang-Kai1,2,3,4 (AUTHOR), Tsai, Tsung-Shun1,2,3 (AUTHOR), Liu, Mingjin1,2,3 (AUTHOR), Chen, Jyun-Hong5 (AUTHOR), Yang, Tzu-Yi1,2,3 (AUTHOR), Cyu, Ruei-Hong1,2,3 (AUTHOR), Chen, Chieh-Ting1,2,3 (AUTHOR), Hsu, Yu-Chieh1,2,3 (AUTHOR), Luo, Chai-Hung1,2,3 (AUTHOR), Huang, Yu-Qi1,2,3 (AUTHOR), Peng, Yu-Ren1,2,3 (AUTHOR), Shen, Chang-Hong5 (AUTHOR), Lin, Yen-Fu6 (AUTHOR), Chiu, Po-Wen2,4 (AUTHOR), King, Ya-Chin2,4 (AUTHOR) ycking@ee.nthu.edu.tw, Chueh, Yu-Lun1,2,3 (AUTHOR) ylchueh@mx.nthu.edu.tw
Publikováno v:
Small Science. Feb2024, Vol. 4 Issue 2, p1-13. 13p.