Zobrazeno 1 - 10
of 42
pro vyhledávání: '"K. C., Rajkumar"'
Autor:
Shah, Santosh1 santshah@hotmail.com, K. C., Rajkumar1, Poudel, Rajesh1, Mishra, Santosh1, Chaudhary, Sudip1, Kshetri, Gaurav1, Shrestha, Sanjay1, Khadka, Tek Bahadur1, Miya, Sabir1
Publikováno v:
Journal of Universal College of Medical Sciences. May-Aug2023, Vol. 11 Issue 2, p3-5. 3p.
Autor:
K. C. Rajkumar
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 9:755-763
RCC and steel frames have been the most common frame systems for long times whereas composite frame system has also emerged as popular system for high rise buildings for few decades. Multi-storey composite frames are generally composed of structural
Autor:
Louise Thwaites, Nhukesh Maharjan, Sarita Pyatha, Buddha Basnyat, Sabina Dongol, K C Rajkumar, Gyan Kayastha, Abhilasha Karkey, Stephen Baker
Publikováno v:
PLoS ONE, Vol 16, Iss 11 (2021)
PLoS ONE, Vol 16, Iss 11, p e0259634 (2021)
PLoS ONE
PLoS ONE, Vol 16, Iss 11, p e0259634 (2021)
PLoS ONE
Epidemiologic data regarding health care acquired pneumonia (HAP) and ventilator-associated pneumonia (VAP) from Nepal are negligible. We conducted a prospective observational cohort study in the intensive care unit (ICU) of a major tertiary hospital
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e1f4c8734cda056883d980165f9f359
Publikováno v:
Journal of Universal College of Medical Sciences; Jul-Dec2022, Vol. 10 Issue 2, p23-26, 4p
Autor:
Dongol, Sabina, Kayastha, Gyan, Maharjan, Nhukesh, Pyatha, Sarita, K. C., Rajkumar, Thwaites, Louise, Basnyat, Buddha, Baker, Stephen, Karkey, Abhilasha
Publikováno v:
PLoS ONE; 11/17/2021, Vol. 16 Issue 11, p1-16, 16p
Autor:
Nan Marie Jokerst, April S. Brown, Robert Bicknell-Tassius, G. Dagnall, Zhe Chuan Feng, C. Carter-Coman, D. E. Dawson, K. C. Rajkumar
Publikováno v:
Journal of Electronic Materials. 25:1044-1048
Compliant substrates allow a new approach to the growth of strained epitaxial layers, in which part of the strain is accommodated in the substrate. In this article, compliant substrates are discussed and a new compliant substrate technology based on
Publikováno v:
Journal of Crystal Growth. 150:311-316
Three-dimensionally confined GaAs/AlGaAs and InAs/GaAs structures on 〈100〉 oriented square mesas patterned onto GaAs(001) substrates are realized, in-situ, via size-reducing molecular beam epitaxy. Two stages of mesa top pinch-off involving ∼ {
Autor:
R. D. Vispute, Satishchandra Ogale, Anupam Madhukar, S. M. Kanetkar, Nalin R. Parikh, B.K. Patnaik, K. C. Rajkumar
Publikováno v:
Physica C: Superconductivity. 199:59-64
Epitaxial growth of Y-ZrO 2 buffer layer followed by that of the high- T c Y 1 Ba 2 Cu 3 O 7−δ on Si (100) substrate has been realized by pulsed excimer laser ( λ =248 nm ) ablation, without chemical removal of the native surface oxide on silicon
Publikováno v:
Journal of Crystal Growth. 111:424-428
The relation between the exciton linewidth and the quantum well width is studied for various In compositions in InGaAs/GaAs quantum wells. A region of minimum exciton linewidth is observed. Thick multiple quantum wells, grown in this minimum linewidt
Publikováno v:
Journal of Crystal Growth. 111:434-439
Initial stages of molecular beam epitaxial (MBE) growth of highly mismatched InxGa1-xAs/GaAs(100) have been studied by planar and cross-sectional transmission electron microscopy. For In0.5Ga0.5As growth, we find drastic differences in morphology obt