Zobrazeno 1 - 10
of 39
pro vyhledávání: '"K. Brown-Goebeler"'
Autor:
P.A. Kiely, Michael S. Lebby, Geoffrey W. Taylor, B. Tell, P. Cooke, D. L. Crawford, T. Y. Chang, K. Brown-Goebeler, J.G. Simmons, A. Isabelle
Publikováno v:
Proceedings of the 1988 Bipolar Circuits and Technology Meeting.
The BICFET, a new form of bipolar transistor that offers superior performance for III-V bipolar integrated circuits and several unique advantages over known approaches for optoelectronic integration, is described. The BICFET does not have a base. Ins
Publikováno v:
IEEE Electron Device Letters. 12:98-100
A process technology for direct-coupled FET logic (DCFL) circuits on InP substrates, based on enhancement-mode InGaAs/InAlAs heterostructure-insulated-gate FETs (HIGFETs) is discussed. Its performance was demonstrated by fabricating 11- and 19-stage
Publikováno v:
Integrated Photonics Research.
High-speed Mach-Zehnder (MZ) intensity modulators are critical components in long-haul, high-bit-rate optical fiber communications systems at 1.55 µm. Here MZ modulators have a clear advantage over directly modulated injection lasers and external el
Autor:
J. L. Jewell, A. Scherer, T. Brennan, M. T. Asom, M. Focht, B. Tell, K. Brown-Goebeler, G. R. Olbright, J. P. Harbison, L. T. Florez
Publikováno v:
Optical Society of America Annual Meeting.
Efficiency and maximum power obtainable from vertical cavity lasers (VCL) are low at present due to high series resistance. It is possible to circumvent this and maintain high cavity quality by using a highly conductive, extremely thin metallic layer
Publikováno v:
Photonic Switching II ISBN: 9783642760259
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95d33a36cca42747151c45eb71419b8
https://doi.org/10.1007/978-3-642-76023-5_31
https://doi.org/10.1007/978-3-642-76023-5_31
Publikováno v:
Optical Society of America Annual Meeting.
We report new self-aligned top-surface-emitting lasers in which top mirrors are used as output mirrors and deep-ion implantation is used for current funneling. The laser structure, grown with molecular-beam epitaxy, is a vertical pin junction in whic
Autor:
D.P. Doctor, P.A. Kiely, T.A. Vang, P.R. Claisse, Geoffrey W. Taylor, P.A. Evaldsson, B. Tell, K. Brown-Goebeler
Publikováno v:
IEE Proceedings - Circuits, Devices and Systems. 142:105
The high-frequency characteristics of the inverted p-channel BCHFET are presented. A unity current gain frequency of 1.4 GHz for a 1.3 mu m device is obtained. DC operation of a complementary inverter is shown using the n inversion channel NFET and t
Autor:
Michael S. Lebby, A. Izabelle, Geoffrey W. Taylor, B. Tell, Tallis Y. Chang, K. Brown-Goebeler, J.G. Simmons
Publikováno v:
IEEE Electron Device Letters. 9:278-280
The bipolar inversion-channel field-effect transistor (BICFET) relies on a field-effect mechanism to induce and modulate an inversion layer placed at the heterojunction interface. The device was fabricated using molecular beam epitaxy. A current gain
Autor:
B. Tell, Geoffrey W. Taylor, P.A. Kiely, Tallis Y. Chang, Michael S. Lebby, A. Izabelle, K. Brown-Goebeler
Publikováno v:
IEEE Electron Device Letters. 10:304-306
An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system with a current gain in a large-area device of greater than 900 is discussed. The device structure utilizes a self-aligned refractory emitter contact and high-temperature processing and
Autor:
A. Izabelle, Geoffrey W. Taylor, Michael S. Lebby, J.G. Simmons, B. Tell, Tallis Y. Chang, K. Brown-Goebeler
Publikováno v:
IEEE Electron Device Letters. 9:84-86
The p-channel bipolar inversion-channel field-effect transistor (BICFET) is a bipolar transistor which utilizes an inversion layer induced by planar doping using molecular beam epitaxy. A current gain of approximately 8 is obtained at a current densi