Zobrazeno 1 - 10
of 34
pro vyhledávání: '"K. Bourenane"'
Publikováno v:
Renewable Energy and Power Quality Journal. :41-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::979302f76f8f66803a3fa01f4891ba13
https://doi.org/10.24084/repqj14.221
https://doi.org/10.24084/repqj14.221
Autor:
Tahar Kerdja, Y. Belkacem, A. Boukezzata, Hamid Menari, K. Bourenane, Aissa Keffous, M. Maoudj, Mohamed Kechouane
Publikováno v:
Materials Science Forum. 609:195-199
In this paper we present the study of a Schottky diode gas sensing by using porous SiC films with palladium as a catalytic metal. The Schottky diodes were used for the first time for hydrocarbon (C2H6) gas sensing. The properties of the porous SiC fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d4a8ac5f94f786518087e03afe5bb2c
https://doi.org/10.4028/www.scientific.net/msf.609.195
https://doi.org/10.4028/www.scientific.net/msf.609.195
Autor:
F. Kezzoula, A. Cheriet, Craig Buttar, Hamid Menari, M. Brozel, K. Bourenane, Aissa Keffous, James Grant, A. Bourenane
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 591:184-187
A model describing the passivation by Li atoms of acceptors arising from radiation damage in Si detectors has been developed. Our studies indicate that it is possible to produce a protocol that will allow the in-situ recovery of lithium-drifted Si pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f841067efdc8a6fc7314b7058b4ffaed
https://doi.org/10.1016/j.nima.2008.03.052
https://doi.org/10.1016/j.nima.2008.03.052
Autor:
Aissa Keffous, F. Kezzoula, K. Bourenane, James Grant, M. Brozel, Hamid Menari, Craig Buttar, A. Bourenane, A. Cheriet
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:14-18
A model describing the passivation by Li atoms of acceptors arising from radiation damage in Si detectors has been developed. Our studies indicate that it is possible to produce a protocol that will allow the in situ recovery of Lithium-drifted Si pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5230309b2ccf308a2fd4ac1eb1d1e375
https://doi.org/10.1007/s10854-008-9707-0
https://doi.org/10.1007/s10854-008-9707-0
Publikováno v:
Optics Communications. 281:2126-2131
In this work, we study the effect of the thickness and porous structure of silicon carbide (PSC) layers on the electrical properties of Schottky photodiodes by using a palladium (Pd) layer deposited on non-porous silicon carbide (SiC) and porous-SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c25f5ad9508ac2affc09a77d2d1dbf
https://doi.org/10.1016/j.optcom.2007.12.064
https://doi.org/10.1016/j.optcom.2007.12.064
Publikováno v:
Modern Physics Letters B. 22:415-424
P-type porous SiC layers were fabricated by anodization of a hot-pressed p-type 6H-SiC (30 kΩcm) and a 1.6 μm SiC film was deposited onto p-type Si (100) substrate by Pulsed Laser Deposition (PLD) in HF. In order to facilitate the electrochemical e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6759c2514cd89168816a25855a242eef
https://doi.org/10.1142/s0217984908014985
https://doi.org/10.1142/s0217984908014985
Autor:
G. Nezzal, K. Bourenane, Aissa Keffous, A. Boukezzata, Hamid Menari, O. Manseri, T. Kerdja, Mohamed Kechouane, F. Kezzoula, A. Bourenane
Publikováno v:
Modern Physics Letters B. 22:61-72
In this paper, we present a comparative study of structural and optical properties of polycrystalline p-type 6H-SiC and thin SiC layer growth onto Si . The thin SiC layer was grown on a p-type Si(100) substrate by pulsed laser deposition (PLD) using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e450f030940e212d77beb8d0c180a5
https://doi.org/10.1142/s0217984908014559
https://doi.org/10.1142/s0217984908014559
Publikováno v:
Surface and Interface Analysis. 40:763-768
A porous SiC layer was fabricated by anodization of a 1.6 µm-thin SiC layer deposited onto p-type Si(100) substrate by pulsed laser deposition (PLD), using a hot-pressed 6H-SiC(p) as sputtered target. P-type porous SiC layers were realized by anodiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::289e49d6dc6ed05277d8bc4cde35f02b
https://doi.org/10.1002/sia.2697
https://doi.org/10.1002/sia.2697
Autor:
Mohamed Kechouane, T. Kerdja, S. Lafane, Aissa Keffous, Noureddine Gabouze, Lakhdar Guerbous, K. Bourenane
Publikováno v:
Journal of Luminescence. 126:561-565
A porous SiC (PSC) layer was fabricated by anodization of a 1.6 μm thin SiC layer deposited onto p-type Si(1 0 0) substrate by pulsed laser deposition (PLD), using a hot-pressed 6H-SiC(p) as sputtered target. p-Type PSC layers were fabricated by ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08aa15fe9446a45a1aa08716fb0a659e
https://doi.org/10.1016/j.jlumin.2006.10.024
https://doi.org/10.1016/j.jlumin.2006.10.024
Autor:
K. Bourenane, Aissa Keffous, Noureddine Gabouze, A. Manseri, T. Kerdja, L. Guerbous, D. Oudjaout, Mohamed Kechouane
Publikováno v:
physica status solidi c. 4:1913-1917
In this work, we report the effect of surface modification by aluminum metallization, prior to anodization in a solution of HF/Ethylene glycol, on the morphology and photoluminescence of p-type porous SiC. For this purpose, a thin metallic film of al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678b1054185870c3d61ef466271e606c
https://doi.org/10.1002/pssc.200674318
https://doi.org/10.1002/pssc.200674318