Výsledky vyhledávání

Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory

Autor: S. R. Summerfelt, R. Bailey, P. Staubs, J. Rodriguez, K. Boku, Theodore S. Moise, M. Arendt, Gregory B. Shinn, K. Remack, J. Eliason, K. R. Udayakumar

Publikováno v: Japanese Journal of Applied Physics. 47:2710-2713

Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leak

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12a6a3da919259b79bc3190c7047d123
https://doi.org/10.1143/jjap.47.2710

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Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process

Autor: Yaw S. Obeng, Gregory B. Shinn, G. R. Fox, Theodore S. Moise, J. S. Martin, A. McKerrow, J. Gertas, S. R. Summerfelt, K. R. Udayakumar, J. Eliason, J. Rodriguez, R. Bailey, A. Haider, K. Remack, K. Boku

Publikováno v: Japanese Journal of Applied Physics. 46:2180-2183

We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89d8da37c116c0c147b55c25bcf4ae62
https://doi.org/10.1143/jjap.46.2180

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Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Autor: S. R. Summerfelt, Theodore S. Moise, K. R. Udayakumar, Sanjeev Aggarwal, Hugh P. McAdams, B. Rathsack, Francis G. Celii, J. Rodriguez, Lindsey H. Hall, L. Matz, J. S. Martin, K. Remack, K. Boku

Publikováno v: Japanese Journal of Applied Physics. 45:3202-3206

High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e7d2c32233b3f3010b8890f4f15bdf3
https://doi.org/10.1143/jjap.45.3202

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Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

Autor: R. Bailey, K. Boku, Kelly J. Taylor, John A. Rodriguez, Francis G. Celii, Joe W. McPherson, Glen R. Fox, Theodore S. Moise, Hugh P. McAdams, M. Depner, Sanjeev Aggarwal, K. Remack, Lindsey H. Hall, K. R. Udayakumar, S. Martin, Scott R. Summerfelt

Publikováno v: IEEE Transactions on Device and Materials Reliability. 4:436-449

We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1a76489e2600454801bf37a125562340
https://doi.org/10.1109/tdmr.2004.837210

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Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Autor: K. Remack, K. R. Udayakumar, K. Boku, Scott R. Summerfelt, J. Rodriguez-Latorre, J. Groat, J. Eliason, F. Chu, M. Depner, Theodore S. Moise, J. Gertas, C. Zhou, L. Wang, J. Rodriguez, D. Kim

Publikováno v: 2010 IEEE International Reliability Physics Symposium.

We present results of a comprehensive reliability evaluation of a 2T–2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4×1013 cycles and data retention equivalent of 10

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::250fdd45e5c20164775ca64a9e286514
https://doi.org/10.1109/irps.2010.5488738

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Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS

Autor: K. R. Udayakumar, A. Haider, M. Depner, Theodore S. Moise, Sudhir K. Madan, K. Boku, J. Eliason, Hugh P. McAdams, R. Bailey, Gregory B. Shinn, K. Remack, D. Kim, P. Staubs, John A. Rodriguez, Scott R. Summerfelt, J. Gertas

Publikováno v: 2008 17th IEEE International Symposium on the Applications of Ferroelectrics.

Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d54d34dec58803718212347155c938e
https://doi.org/10.1109/isaf.2008.4693960

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Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Autor: M. Depner, D. Kim, Theodore S. Moise, Scott R. Summerfelt, Hugh P. McAdams, J. Eliason, J. Rodriguez, J. Gertas, P. Staubs, Sudhir K. Madan, K. Remack, Gregory B. Shinn, K. R. Udayakumar, K. Boku, R. Bailey

Publikováno v: 2007 Non-Volatile Memory Technology Symposium.

Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4times1012 cycles shows no degradation of switched polarization. 10 year, 85degC, dat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cfa0ce9d209fb1d5cdfd448bef95d2a
https://doi.org/10.1109/nvmt.2007.4389948

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Hemoperitoneum as the first manifestation of acute leukemia

Autor: K. Okuno, K. Boku, C. Kuragaki, Toshiya Yamamoto, K. Miyanishi, F. Nishimoto

Publikováno v: Gynecologic and obstetric investigation. 66(1)

A rare case of a 31-year-old woman is reported who had massive intraperitoneal bleeding caused by ovarian hemorrhage as the first manifestation of acute leukemia. Preoperative laboratory findings revealed severe anemia (Hb 6.6 g/dl) and thrombocytope

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ef92cdf5f183fcf042faea306f6e89b
https://pubmed.ncbi.nlm.nih.gov/18230909

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High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process

Autor: R. Bailey, J. Gertas, J. Rodriguez, M. Depner, Theodore S. Moise, D. Kim, Hugh P. McAdams, K. R. Udayakumar, J. Eliason, P. Staubs, K. Boku, Sudhir K. Madan, J. Groat, K. Remack, Scott R. Summerfelt

Publikováno v: 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.

Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low numbe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a3cf64712ec574ba9145ef0a6eb31ebd
https://doi.org/10.1109/isaf.2007.4393151

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