Zobrazeno 1 - 10
of 25
pro vyhledávání: '"K. Beyzavi"'
Publikováno v:
Electron Microscopy and Analysis 1997 ISBN: 9781003063056
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f640ca5d7657771cfe3882815f0342
https://doi.org/10.1201/9781003063056-136
https://doi.org/10.1201/9781003063056-136
Publikováno v:
IEEE Photonics Technology Letters. 6:227-230
We have observed a strong dependence of the optical switching energy of a p-n-p-n VSTEP device on the area of the illuminated spot. We explain the area dependence in terms of a long diffusion time (/spl sim/1 /spl mu/s) required for the photo-generat
Publikováno v:
IEEE Photonics Technology Letters. 7:1162-1164
We demonstrate for the first time a 1.3-/spl mu/m wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity s
Publikováno v:
LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings.
A common problem confronting the realization of optoelectronic interconnection processors over the last several years is the ability to both perform logical operations (i.e. computations) and rapidly and dynamically reconfigure the processor in a com
Publikováno v:
Applied Physics Letters. 62:861-863
AlGaAs/GaAs heterojunction bipolar transistors with different base doping concentrations grown by gas source molecular beam epitaxy were fabricated and characterized at dc and high frequency. Three different base doping concentrations; 5×1018, 1×10
Publikováno v:
Applied Physics Letters. 58:1268-1270
The electron mobility in p‐type GaAs, μpe, has been determined as a function of temperature by measuring the common‐emitter cutoff frequency, fT, of an AlGaAs/GaAs n‐p‐n heterojunction bipolar transistor. The base was 0.6 μm thick and it wa
Autor:
M. I. Nathan, T. J. Miller, F. Williamson, S. Strite, J. C. Costa, Hadis Morkoç, D. S. L. Mui, K. Beyzavi
Publikováno v:
Applied Physics Letters. 58:382-384
Al/n‐GaAs and Al/Si/n‐GaAs structures with thin silicon interfacial layers were grown in situ by molecular beam epitaxy and their electrical characteristics were measured. Effective barrier heights between 0.30 and 1.04 eV were determined through
Publikováno v:
IEEE Princeton/Central Jersey Sarnoff Symposium.
Publikováno v:
Clinical Endocrinology. 29:9-16
A direct radioimmunoassay in unextracted plasma is described. The assay has a sensitivity of 4 pmol/l (2 standard deviation from zero). The proinsulin antiserum was immuno-adsorbed against human C-peptide and insulin coupled to glass beads. Cross-rea
Publikováno v:
Scopus-Elsevier
The periodate method was found to be most effective for preparing horseradish peroxidase-sheep anti-human and horseradish peroxidase-donkey anti-mouse immunoglobulin (IgG) conjugates. The conjugates were improved by carrying out the oxidation of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::540a75a4d583e2f28d4d8818a38a5752
http://www.scopus.com/inward/record.url?eid=2-s2.0-0023097955&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0023097955&partnerID=MN8TOARS