Zobrazeno 1 - 10
of 149
pro vyhledávání: '"K. Barla"'
Autor:
A. P. Milenin, J. Franco, L. Witters, E. Vancoille, D. Tsvetanova, N Horiguchi, H. Bender, Mustafa Badaroglu, A.V-Y Thean, K Barla, R Ritzenthaler, H Mertens, A. Hikavyy, F. Holsteyns, K. Devriendt, A. Dangol, D. Mocuta, V. Machkaoutsan, H. Arimura, B. J. Pawlak, F. Sebaai
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
We demonstrate Si-cap-free SiGe p-channel FinFETs and gate-all-around (GAA) FETs in a replacement metal gate (RMG) process, for Ge contents of 25% and 45%. We show that the performance of these devices is substantially improved by high-pressure (HP)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a290997500e073f5bee255bafeef9bb
https://doi.org/10.1109/vlsit.2015.7223654
https://doi.org/10.1109/vlsit.2015.7223654
Publikováno v:
Journal of Non-Crystalline Solids. 280:59-62
Silicon nitride is currently used as the dielectric in dynamic random access memory storage capacitors. The needs in terms of lifetime result in growing nitride that has a minimum leakage current while having the maximum electrical strength such as e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2856012ad2b8ac08d6bd37c75fbc3d20
https://doi.org/10.1016/s0022-3093(00)00354-9
https://doi.org/10.1016/s0022-3093(00)00354-9
Publikováno v:
Microelectronics Reliability. 39:791-795
A new model for the oxide thickness dependence of the SILC generation has been proposed on the basis of defects created by anode hole injection. This model which has been validated on oxides with thickness down to ≈3nm, allows the explanation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c1e4960cdd946731695d5736cb800ca
https://doi.org/10.1016/s0026-2714(99)00102-x
https://doi.org/10.1016/s0026-2714(99)00102-x
Publikováno v:
Journal of Non-Crystalline Solids. 245:33-40
Boron penetration from a p+ polysilicon gate through a gate oxide and into the silicon substrate is a critical issue for the formation of the gate stack in the submicron complementary metal oxide semiconductor devices. Boron incorporation results in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13eae407f82e34e72d412e4859dd9453
https://doi.org/10.1016/s0022-3093(98)00851-5
https://doi.org/10.1016/s0022-3093(98)00851-5
Publikováno v:
Microelectronics Reliability. 37:1529-1532
Investigation on the stress induced leakage current shows that the SILC degradation rate follows a pure power law with the injection dose which is almost independent of gate bias polarity and stress current intensity. Moreover, it has also been found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::990c612b6322d0536c3630988dab444a
https://doi.org/10.1016/s0026-2714(97)00101-7
https://doi.org/10.1016/s0026-2714(97)00101-7
Autor:
F. Tardif, T. Lardin, C. Paillet, JP Joly, B. Beneyton, P. Patruno, D. Levy, K. Barla, W. Sievert
Publikováno v:
Microelectronic Engineering. 28:121-124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab6e2ee997d4d7c6927aaf3e191efd6
https://doi.org/10.1016/0167-9317(95)00028-7
https://doi.org/10.1016/0167-9317(95)00028-7
Akademický článek
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Autor:
K. Barla, Carlos A. Mazure, Dean J. Denning, M. Haond, Craig D. Gunderson, B. Piot, Jon T. Fitch, A. Straboni
Publikováno v:
Microelectronic Engineering. 15:479-482
During selective epitaxial Si growth the wafers are exposed to a H 2 rich atmosphere. The impact of high temperature hydrogen prebake, typical of selective Si epitaxial processes, on thin dielectrics is investigated. A prebake temperature range of 85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27593c3b8ecc4b60f45c3ac6181bc011
https://doi.org/10.1016/0167-9317(91)90268-i
https://doi.org/10.1016/0167-9317(91)90268-i
Autor:
Remi Beneyton, H. Bono, B. Dumont, Florian Cacho, K. Barla, Pierre Morin, A. Colin, M. Bidaud
Publikováno v:
16th International IEEE Conference on Advanced Thermal Processing of Semiconductors (RTP 2008)
16th International IEEE Conference on Advanced Thermal Processing of Semiconductors (RTP 2008), Sep 2008, Las Vegas, United States. Proc. pp. 183-193
16th International IEEE Conference on Advanced Thermal Processing of Semiconductors (RTP 2008), Sep 2008, Las Vegas, United States. Proc. pp. 183-193
Local thermal variation occurring during light enhanced rapid thermal process (RTP) and millisecond anneals called “pattern effects” have various origin, with more or less impact as function of the used process. The main issues concern the variat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3479a25edeb9e98a0df316c3529f313f
https://hal.archives-ouvertes.fr/hal-00370383
https://hal.archives-ouvertes.fr/hal-00370383
Publikováno v:
Journal of Applied Physics. 68:3635-3642
Plasma nitridation of thin oxides has been investigated at a temperature of 950 °C for 10 min–6 h and within an rf power of between 400 and 1100 W. The nitrogen composition in these films has been characterized in sputter depth Auger experiments.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d3e77d952cf45d446502a37895bcec9
https://doi.org/10.1063/1.346326
https://doi.org/10.1063/1.346326