Zobrazeno 1 - 8
of 8
pro vyhledávání: '"K. Baghbani Parizi"'
Publikováno v:
Solid-State Electronics. 54:48-51
In this paper a new asymmetric Schottky barrier MOSFET structure is presented which employs a thin interfacial insulator layer in the metal/silicon junction at the source. This asymmetric structure leads to a considerable improvement in the on/off ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08d5fb4b6159711dbea6b5576ab15133
https://doi.org/10.1016/j.sse.2009.09.010
https://doi.org/10.1016/j.sse.2009.09.010
Autor:
K. Baghbani Parizi, Roger Fabian W. Pease, Hesaam Esfandyarpour, Lei Yuan, Andrew R. Neureuther, Wojtek J. Poppe, E. H. Anderson, James Alexander Liddle
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:1902
Shot noise in electron-beam and extreme ultraviolet (EUV) exposure fundamentally limits the useful sensitivity of resists. Here the exposure, amplification, and deprotection of chemically amplified resists are treated as a sequence of statistical eve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27576615a88dfbd58155c105ab7120c8
https://doi.org/10.1116/1.2218875
https://doi.org/10.1116/1.2218875
Akademický článek
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Publikováno v:
APL Materials; Jul2018, Vol. 6 Issue 7, pN.PAG-N.PAG, 14p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Nov/Dec2006, Vol. 24 Issue 6, p2931-2935, 5p, 2 Diagrams, 1 Chart, 1 Graph
Autor:
Neureuther, A. R., Pease, R. F. W., Yuan, L., Parizi, K. Baghbani, Esfandyarpour, H., Poppe, W. J., Liddle, J. A., Anderson, E. H.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jul/Aug2006, Vol. 24 Issue 4, p1902-1908, 7p, 4 Black and White Photographs, 1 Chart, 1 Graph
Autor:
Solomon, Paul M.
Publikováno v:
IEEE Electron Device Letters; Jun2010, Vol. 31 Issue 6, p618-620, 3p
Autor:
Keisuke Yamamoto, Kohei Nakae, Dong Wang, Hiroshi Nakashima, Zhongying Xue, Miao Zhang, Zengfeng Di
Publikováno v:
Japanese Journal of Applied Physics; Apr2019, Vol. 58 Issue SB, p1-1, 1p