Zobrazeno 1 - 2
of 2
pro vyhledávání: '"K. B. Ouellette"'
Autor:
Gary R. Buske, T. M. Stokich, H. C. Silvis, J. D. Perry, James P. Godschalx, Robert E. Hefner, John W. Lyons, K. B. Ouellette, Jerry L. Hahnfeld, Thomas H. Kalantar, Qing Shan J. Niu, R. J. Strittmatter, J. M. Dominowski, E. Mubarekyan
Publikováno v:
MRS Proceedings. 766
Porous SiLK resin is an ultra-low-k interlayer dielectric (ILD) material designed to meet the needs of the 65 nm technology node and beyond. In early 2002, the porous SiLK resin formulation was defined and scaled up, facilitating the tight monitoring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::705cc18a153f3f80d744da44ef667123
https://doi.org/10.1557/proc-766-e7.5
https://doi.org/10.1557/proc-766-e7.5
Publikováno v:
AIP Conference Proceedings.
The continual drive for faster interconnects in integrated circuits requires the development of new interlayer dielectric materials with k values less than 2.2. Porous SiLK semiconductor dielectric resin was developed to achieve this low dielectric c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efcc099344160757796497dafb30eed
https://doi.org/10.1063/1.1622528
https://doi.org/10.1063/1.1622528