Zobrazeno 1 - 8
of 8
pro vyhledávání: '"K. B. Klepper"'
Autor:
Mikko Ritala, Ville Miikkulainen, M. Parenti, Miia Mäntymäki, Michelle M. Paquette, Sean W. King, J. Bielefeld, E. Mays, William A. Lanford, Nancy J. Dudney, Wyatt E. Tenhaeff, Donghyi Koh, Anthony N. Caruso, Jani Hämäläinen, Sanjay K. Banerjee, K. B. Klepper, Bradley J. Nordell, Ola Nilsen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 371:211-215
In this paper, 15N nuclear reaction analysis (NRA) for H is combined with 1.2 MeV deuteron (D) NRA which provides a simultaneous analysis for Li, Be, B, C, N, O and F. The energy dependence of the D NRA has been measured and used to correct for the D
Autor:
Ola Nilsen, Ville Miikkulainen, Dhanadeep Dutta, Han Li, Helmer Fjellvåg, David W. Gidley, Liza Ross, William A. Lanford, Ming Liu, Sean W. King, K. B. Klepper
Publikováno v:
MRS Proceedings. 1791:15-20
The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and var
Publikováno v:
Dalton Trans.. 43:3492-3500
A main goal in the construction of thin films is to control film growth in all aspects. Accurate control of the building blocks and their reaction sites is one way to achieve that. This is a key feature of the atomic layer deposition (ALD) technique.
Publikováno v:
European Journal of Inorganic Chemistry. 2011:5305-5312
The atomic layer deposition (ALD) technique has been further developed as a tool for producing thin films of organic–inorganic hybrid materials. Trimethylaluminium (TMA) and unsaturated linear carboxylic acids such as maleic acid, fumaric acid and
Publikováno v:
ECS Transactions. 16:3-14
The atomic layer deposition (ALD) technique has proved to be very suitable for deposition of thin films of organic- inorganic hybrid type of materials. This class of materials combines the rigid structures and physical properties of inorganic materia
Publikováno v:
Journal of Crystal Growth. 307:457-465
Highly oriented thin films of cobalt oxide were made by the atomic layer deposition (ALD) technique, using Co(thd)2 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on single-crystalline substrates of MgO(1 0 0
Publikováno v:
Thin Solid Films. 515:7772-7781
Thin films of cobalt oxide were made by atomic layer deposition (ALD), using Co(thd) 2 (Hthd = 2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on soda–lime glass and single crystals of Si(100). Pulse and purge par
Publikováno v:
Dalton Transactions. 40:4636
Atomic layer deposition (ALD) has successfully provided thin films of organic-inorganic hybrid materials based on saturated linear carboxylic acids and trimethylaluminium (TMA). Films were grown for seven carboxylic acids: oxalic, malonic, succinic,