Zobrazeno 1 - 10
of 303
pro vyhledávání: '"K. B. Bhasin"'
Autor:
K. B. Bhasin
Publikováno v:
Computer Networks. 47:599-601
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b496f430dd9afe09aa741a66c38c7768
https://doi.org/10.1016/j.comnet.2004.08.007
https://doi.org/10.1016/j.comnet.2004.08.007
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:566-572
A superconductor-semiconductor hybrid reflection-type phase shifter circuit has been designed, fabricated, and characterized for 180/spl deg/ phase bit with center frequency of 4 GHz and bandwidth of 0.5 GHz for operation at 77 K. All of the passive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc4a37fbf78ed9b6070cd71d56b247b
https://doi.org/10.1109/22.372102
https://doi.org/10.1109/22.372102
Publikováno v:
Journal of Applied Physics. 72:2396-2403
The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ad0ab3f3adbdff2a0f738f7791206b9
https://doi.org/10.1063/1.351583
https://doi.org/10.1063/1.351583
Publikováno v:
Superconductor Science and Technology. 5:421-426
YBa2Cu3O(7-delta) thin films were formed on NdGaO3 substrates by laser ablation. Critical temperatures greater than 89 K and critical current densities exceeding 2 x 10(exp 8) Acm(sub -2) at 77 K were obtained. The microwave performance of films patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18b9aae6c19b7de1c232c72b8c7f5f4b
https://doi.org/10.1088/0953-2048/5/7/002
https://doi.org/10.1088/0953-2048/5/7/002
Publikováno v:
AMPC Asia-Pacific Microwave Conference.
A two pole superconducting bandpass filter was combined with a packaged GaAs low noise amplifier, and a superconducting X-band oscillator was designed, fabricated, and tested. Both circuits were compared to normal metal circuits at 77K. The results o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aecbbfdb2b048228f1a992795a7f497
https://doi.org/10.1109/apmc.1992.671973
https://doi.org/10.1109/apmc.1992.671973
Publikováno v:
Applied Physics Letters. 57:1058-1060
The millimeter-wave surface resistance of YBa2Cu3O(7-delta) superconducting films was measured in a gold-plated copper host cavity at 58.6 GHz between 25 and 300 K. High-quality laser-ablated films of 1.2-micron thickness were deposited on SrTiO3 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c25378a1fc9a7c551fcf0b260a8c36
https://doi.org/10.1063/1.104281
https://doi.org/10.1063/1.104281
Publikováno v:
Superconductor Science and Technology. 3:437-439
Samples of LaAlO3 made by flame fusion and the Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O7- delta thin films. After oxygen annealing at 750 degrees C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f38febdaae26958c3620793ba4c9f7b
https://doi.org/10.1088/0953-2048/3/9/001
https://doi.org/10.1088/0953-2048/3/9/001
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:590-593
Dry etching of cubic (100)β‐SiC single crystal thin films produced via chemical vapor deposition (CVD) has been performed in CF4 and CF4+O2 mixtures, in both the reactive ion etching (RIE) and plasma etching modes. The latter process yielded measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b65deb914a32cba06647a4dc0e596f
https://doi.org/10.1116/1.573854
https://doi.org/10.1116/1.573854
Autor:
K. B. Bhasin, Rainee N. Simons
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 34:1349-1355
Light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor band gap for GaAs MESFET, InP MESFET, Al/sub 0.3/Ga/sub 0.7/As/GaAs high electron mobility transistor (HEMT), and GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57551f42519f4cd501f2ad0a65fde247
https://doi.org/10.1109/tmtt.1986.1133548
https://doi.org/10.1109/tmtt.1986.1133548
Autor:
K. B. Bhasin, D.J. Connolly
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 34:994-1001
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple- scanning beam antenna systems are expected to use G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081038ecfdf7b0134df22ade6d061808
https://doi.org/10.1109/tmtt.1986.1133489
https://doi.org/10.1109/tmtt.1986.1133489