Zobrazeno 1 - 10
of 16
pro vyhledávání: '"K. Avary"'
Publikováno v:
Microelectronic Engineering. :875-880
High quality two-dimensional photonic crystals were fabricated by electron-beam lithography and a combination of reactive ion etching (RIE) and chemically assisted ion beam etching (CAIBE) in GaAs/AlGaAs slab waveguides. With optimized parameters, et
Publikováno v:
Scopus-Elsevier
An electron cyclotron resonance reactive ion etching process is investigated for the fabrication of third order deeply etched distributed Bragg reflectors suitable for monolithically integrated laser mirrors. At a period of 550-nm, air-gaps as small
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:300-305
High performance edge-emitting microlasers with deeply etched distributed Bragg reflectors (DBRs) were fabricated on an AlGaAs-GaAs laser structure with a single GaInAs quantum dot (QD) active layer. Mirror reflectivities well above 90% were achieved
Autor:
D. Cheung, C. Rude, V. Baudiquez, Arnaud Favre, E. Foca, Magali Davenet, F. Dufaye, J. Palisson, Jean Marie Foray, S. Gopalakrishnan, Stuart Gough, I. Hollein, P. Richteiger, K. Avary, P. Nesladek
Publikováno v:
25th European Mask and Lithography Conference.
Contamination and especially Airbone Molecular Contamination (AMC) is a critical issue for mask material flow with a severe and fairly unpredictable risk of induced contamination and damages especially for 193 nm lithography. It is therefore essentia
Autor:
D. Cheung, Magali Davenet, H. Fontaine, K. Avary, Patrice Dejaune, T. Trautmann, Arnaud Favre, C. Rude, Stuart Gough, R. Lerit, Michel Tissier, M. Veillerot, Jean Marie Foray, I. Hollein, Pierre Sergent
Publikováno v:
SPIE Proceedings.
Context/ study Motivation: Contamination and especially Airbone Molecular Contamination (AMC) is a critical issue for mask material flow with a severe and fairly unpredictable risk of induced contamination and damages especially for 193 nm lithograph
Publikováno v:
Scopus-Elsevier
We have fabricated high performance ultrashort quantum dot microlasers based on deeply etched distributed Bragg reflector (DBR) mirrors with cavity lengths down to 16 /spl mu/m and threshold currents as low as 1.2 mA for a 30 /spl mu/m and 3.2 mA for
Autor:
S. Rennon, K. Avary, Monika Emmerling, F. Klopf, A. Wolf, Alfred Forchel, Johann Peter Reithmaier
Publikováno v:
Electronics Letters. 36:1548
Edge-emitting short-cavity lasers with deeply-etched Bragg mirrors were fabricated on a GaInAs/AlGaAs laser structure with a single active layer of self-organised GaInAs quantum-dots. Continuous wave operation has been achieved down to cavity lengths
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