Zobrazeno 1 - 10
of 122
pro vyhledávání: '"K. Arafune"'
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d0faccc3c9ed01eea950b27bb023f47
https://doi.org/10.7567/ssdm.2017.j-1-06
https://doi.org/10.7567/ssdm.2017.j-1-06
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::673733250e9c8d357407c360e6493cdc
https://doi.org/10.7567/ssdm.2016.ps-8-05
https://doi.org/10.7567/ssdm.2016.ps-8-05
EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells
Autor:
K. Arafune, Atsushi Ogura, Yuki Tsuchiya, Tomihisa Tachibana, Naoto Miyazaki, Yoshio Ohshita, Takashi Sameshima
Publikováno v:
Materials Science Forum. 725:129-132
Interactions between intra-grain defects and metal impurities in multicrystalline silicon (mc-Si) were evaluated. After metal contaminations, EBIC contrasts at > 1.5o SA-GBs were more enhanced than those at Ni/1000 oC > Ni/600 oC. These results might
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07a9c21d85ee1bdb203cd62d91fb9bd3
https://doi.org/10.4028/www.scientific.net/msf.725.129
https://doi.org/10.4028/www.scientific.net/msf.725.129
Akademický článek
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Autor:
K. Arafune, Yoshimi Momose, Hideki Kawai, Chung-Hao Chen, Toru Aoki, Tetsuo Ozawa, Hisashi Morii, Tadanobu Koyama, Takuya Hikida, Yasuhiro Hayakawa, Akiko Konno
Publikováno v:
Journal of Crystal Growth. 310(7-9):1487-1492
The X-ray penetration intensity during the diffusion process of NH4Br into H2O was measured by a CdTe line sensor as a function of time and it was converted to the NH4Br composition using a calibration line. The diffusion coefficient of NH4Br into H2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83ab3e7638f6ee1d38409aff288d004e
http://hdl.handle.net/10297/2622
http://hdl.handle.net/10297/2622
Autor:
Takuya Hikida, Akiko Konno, Yoshimi Momose, K. Arafune, N. Murakami, Tadanobu Koyama, Tetsuo Ozawa, Masafumi Miyazawa, Yasuhiro Hayakawa, Masashi Kumagawa
Publikováno v:
Journal of Crystal Growth. 310:1433-1437
The paper describes the method to grow homogeneous InxGa1−xSb ternary alloy bulk crystals. The InxGa1−xSb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d842a1b8d8838846d7cad02dc96ba1e2
https://doi.org/10.1016/j.jcrysgro.2007.11.067
https://doi.org/10.1016/j.jcrysgro.2007.11.067
Publikováno v:
Solar Energy. 80:104-110
Crystalline silicon solar cells show promise for further improvement of cell efficiency and cost reduction by developing process technologies for large-area, thin and high-efficiency cells and manufacturing technologies for cells and modules with hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad7d5dfe87c8bcc783de3458407be645
https://doi.org/10.1016/j.solener.2005.02.013
https://doi.org/10.1016/j.solener.2005.02.013
Autor:
P. Jayavel, Yasuhiro Hayakawa, Masashi Kumagawa, Y Kobayashi, S. Nakamura, Tadanobu Koyama, K. Arafune
Publikováno v:
Semiconductor Science and Technology. 20:1064-1067
We have investigated the structural and electrical properties of InAsxSb1−x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa2fea3653e70d8e9528106b2810ee1
https://doi.org/10.1088/0268-1242/20/10/013
https://doi.org/10.1088/0268-1242/20/10/013
Autor:
N. Murakami, T. Suzuki, Masashi Kumagawa, Tetsuo Ozawa, K. Arafune, Yasuhiro Hayakawa, Yasunori Okano
Publikováno v:
Journal of Crystal Growth. 275:e1507-e1512
A numerical analysis has been carried out to clarify the effect of gravity level and the cooling rate on the growth interface shape and supercooling. A horizontal sandwich model of GaSb/In–Ga–Sb/GaSb combination has been used, where GaSb is in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58831f2a4271edd6d9a3e0ab56710b2c
https://doi.org/10.1016/j.jcrysgro.2004.11.183
https://doi.org/10.1016/j.jcrysgro.2004.11.183
Publikováno v:
Journal of Crystal Growth. 263:320-326
The effect of gravitational direction on the dissolution of GaSb crystal into InSb melt and the growth of InGaSb was investigated using GaSb(seed)/InSb/GaSb(feed) sandwich sample under a constant temperature gradient. In 0.03 Ga 0.97 Sb crystal was g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345c4afc7785f525e5691eec74fe8d90
https://doi.org/10.1016/j.jcrysgro.2003.11.068
https://doi.org/10.1016/j.jcrysgro.2003.11.068