Zobrazeno 1 - 10
of 37
pro vyhledávání: '"K. Allums"'
Autor:
K. Righter, N. G. Lunning, K. Nakamura‐Messenger, C. J. Snead, J. McQuillan, M. Calaway, K. Allums, M. Rodriguez, R. C. Funk, R. S. Harrington, W. Connelly, T. Cowden, J. P. Dworkin, C. C. Lorentson, S. A. Sandford, E. B. Bierhaus, S. Freund, H. C. Connolly, D. S. Lauretta
Publikováno v:
Meteoritics & Planetary Science. 58:572-590
Akademický článek
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Autor:
R. Dwivedi, S. J. Pearton, M. Hlad, C. R. Abernathy, Richard Wilkins, A. P. Gerger, K. K. Allums, T. N. Fogarty, Brent P. Gila, Fan Ren
Publikováno v:
Journal of Electronic Materials. 36:519-523
Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 × 109 cm−2, corresponding to 10 years in low-earth orbit. The proton damage causes a decre
Autor:
Soohwan Jang, Stephen J. Pearton, Fan Ren, C. R. Abernathy, A. H. Onstine, D. Stodilka, Timothy J. Anderson, Brent P. Gila, Andrew M. Herrero, M. Hlad, K. K. Allums, G. T. Thaler, A. Gerger, B. S. Kang
Publikováno v:
Solid-State Electronics. 50:1016-1023
In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects for these di
Autor:
C. R. Abernathy, Kelly P. Ip, Richard Wilkins, S. Shojah-Ardalan, K. K. Allums, Young-Woo Heo, Fan Ren, Rohit Khanna, David P. Norton, K.H. Baik, Stephen J. Pearton
Publikováno v:
Scopus-Elsevier
Zinc oxide is generally considered to be radiation hard, although there are few experimental reports supporting this assertion. In this paper, we present results on the changes in electrical performance of bulk Pt/ZnO Schottky rectifiers exposed to 4
Autor:
Young-Woo Heo, Kelly P. Ip, Fan Ren, K.H. Baik, Stephen J. Pearton, Rohit Khanna, Richard Wilkins, R. Dwivedi, C. R. Abernathy, K. K. Allums, David P. Norton, T. N. Fogarty
Publikováno v:
physica status solidi (a). 201:R79-R82
Bulk ZnO Schottky rectifiers with Pt rectifying contacts were exposed to 40 MeV protons at fluences from 5 x 109 to 5 x 10 10 cm -2 . These doses correspond to that received in more than 10 or 100 years, respectively, in low earth satellite orbit. Th
Autor:
Fan Ren, Robert C. Fitch, K. K. Allums, Richard Wilkins, A. H. Onstine, C. R. Abernathy, T. N. Fogarty, R. Dettmer, James K. Gillespie, Steve Pearton, T.J. Jenkins, J. Sewell, R. Dwivedi, Brent P. Gila, Randy J. Shul, B. Luo, Antonio Crespo, Albert G. Baca, Glen D. Via
Publikováno v:
Solid-State Electronics. 47:1015-1020
AlGaN/GaN high electron mobility transistors with either MgO or Sc 2 O 3 surface passivation were irradiated with 40 MeV protons at a dose of 5×10 9 cm −2 . While both forward and reverse bias current were decreased in the devices as a result of d
Autor:
T. N. Fogarty, Jerry W. Johnson, Amir M. Dabiran, C. R. Abernathy, Fan Ren, B. Luo, Peter Chow, Richard Wilkins, K. K. Allums, R. Dwivedi, C. J. Polley, A. M. Wowchack, Albert G. Baca, Stephen J. Pearton
Publikováno v:
Journal of Electronic Materials. 31:437-441
AlGaN/GaN high-electron mobility transistors (HEMTs) show decreases in extrinsic transconductance, drain-source current threshold voltage, and gate current as a result of irradiation with 40 MeV protons at doses equivalent to decades in low-earth orb
Autor:
C. R. Abernathy, Jihyun Kim, Fan Ren, Stephen J. Pearton, T. N. Fogarty, K. K. Allums, Rohit Khanna, R. Dwivedi, Richard Wilkins
Publikováno v:
Applied Physics Letters. 85:3131-3133
InGaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525nm were irradiated with 40MeV protons to doses of 5×109–5×1010cm−2. The highest dose is equivalent to more than 100 yea
Autor:
Fan Ren, K. K. Allums, C. R. Abernathy, Antonio Crespo, Jihyun Kim, B. Luo, T. N. Fogarty, Robert C. Fitch, J. K. Gillespie, James S. Sewell, S. J. Pearton, Glen D. Via, Brent P. Gila, R. Dwivedi, Richard Wilkins, T. Jenkins, A. H. Onstine, R. Dettmer
Publikováno v:
Applied Physics Letters. 82:1428-1430
Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm−2). Devices with an AlGaN cap layer showed less degradation