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pro vyhledávání: '"K. Akshay"'
Autor:
K. Akshay, Shreepad Karmalkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1129-1137 (2020)
We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al2O3/SiO2; the inter-layer i
Externí odkaz:
https://doaj.org/article/c4702b72f6bf4218831bfdb98c9f79d0
Autor:
K. Akshay, Shreepad Karmalkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1315-1316 (2020)
This note clarifies an important approximation used to simulate the breakdown field in the SiO2 liner of a SiC Charge-Sheet Superjunction - a new power device structure - reported by Akshay and Karmalkar (2020). This electric field simulation sought
Externí odkaz:
https://doaj.org/article/8b1d593560a843e7b4b4876b190920bd
Publikováno v:
In Journal of Alloys and Compounds 15 October 2023 960
Publikováno v:
IEEE Sensors Journal; December 2024, Vol. 24 Issue: 24 p40417-40422, 6p
Autor:
Somu, Nivethitha, M.R., Gauthama Raman, Kaveri, Akshya, K., Akshay Rahul, Krithivasan, Kannan, V.S., Shankar Sriram
Publikováno v:
In Applied Soft Computing Journal March 2020 88
Akademický článek
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Publikováno v:
Journal of Cardiovascular Disease Research (Journal of Cardiovascular Disease Research); 2023, Vol. 14 Issue 6, p2122-2125, 4p
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811959356
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e54c49447567ab1e99e3e06ee7ebea5
https://doi.org/10.1007/978-981-19-5936-3_55
https://doi.org/10.1007/978-981-19-5936-3_55
Publikováno v:
Graduate Research in Engineering and Technology. :37-42
The world is rapidly becoming more automated. People had limited time to do any work, therefore automation became an easy approach to control any device that worked according to our wishes. This study is primarily concerned with the development and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583413873702c5ed2f5c9caa49ce352f
https://doi.org/10.47893/gret.2021.1116
https://doi.org/10.47893/gret.2021.1116
Autor:
K. Akshay, Shreepad Karmalkar
Publikováno v:
IEEE Transactions on Electron Devices. 68:1798-1803
Development of Superjunction (SJ) technology has striven to raise the pillar aspect ratio, ${r}$ , believing that this is the key to progressively reduce the specific ON-resistance, ${R}_{\text {ONSP}}$ , for a target breakdown voltage ( ${V}_{\text
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8836842e30c77f4eb088b7dd450e82cc
https://doi.org/10.1109/ted.2021.3060684
https://doi.org/10.1109/ted.2021.3060684