Zobrazeno 1 - 10
of 37
pro vyhledávání: '"K. Akkılıç"'
Autor:
İkram Orak, İlhan Uzun, Hatice Karaer Yağmur, K. Akkılıç, Mehmet Karakaplan, Şerife Pınar Yalçın
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:20090-20100
In this study, two new chitin derivatives were firstly synthesized. The products formed as a result of the reactions between chitin with 4-bromo-1,8-naphthalic anhydride and 4,4′-oxydiphthalic anhydride were abbreviated as C4B18NA and C44′OA, res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0979a9c1edba717670004fe4711bf60f
https://doi.org/10.1007/s10854-020-04530-0
https://doi.org/10.1007/s10854-020-04530-0
Publikováno v:
Materials Science in Semiconductor Processing. 58:34-38
Cadmium sulfide (CdS) thin films were deposited onto soda lime glasses and p-Si semiconductors at various substrate temperatures (40, 150 and 275 °C) by radio frequency (RF) sputtering technique. The effect of substrate temperature on morphological,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5a6a1a041fb4ce4100944752de9600
https://doi.org/10.1016/j.mssp.2016.11.023
https://doi.org/10.1016/j.mssp.2016.11.023
Autor:
T. Kılıçoğlu, K. Akkılıç, Metin Atlan, Ahmet Tombak, Hamdi Temel, Murat Aydemir, Salih Paşa, Yusuf Selim Ocak
Publikováno v:
Applied Organometallic Chemistry. 29:798-804
Naringenin-based Schiff base ligands with 4-aminobenzoic hydrazide were obtained as a unilateral form (). The ligand was oligomerized by oxidative polycondensation reaction with NaOCl as an oxidant in an aqueous alkaline medium at 90 °C to form a fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc429a025ac435b14e6116c7e4052cbb
https://doi.org/10.1002/aoc.3371
https://doi.org/10.1002/aoc.3371
Publikováno v:
Journal of Clean Energy Technologies. 3:291-295
Despite the increasingly widespread production of electricity from solar energy and despite Turkey is in the sun belt, Turkey cannot used its potential sufficiently effective and widely. Especially, this situation is of more importance for the Southe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceacd9752df318074e9921784cf0c2ee
https://doi.org/10.7763/jocet.2015.v3.211
https://doi.org/10.7763/jocet.2015.v3.211
Publikováno v:
Synthetic Metals. 159:1603-1607
Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current–voltage ( I – V ) and capacitance–voltage ( C – V ) measurements of the device at room temperature. Cheung functions and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::925385aabfe9790e6486fd1f4381e09b
https://doi.org/10.1016/j.synthmet.2009.04.024
https://doi.org/10.1016/j.synthmet.2009.04.024
Publikováno v:
Synthetic Metals. 158:969-972
Electronic properties of organic–inorganic (OI) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu 2 (L)(ClO 4 ) 2 ][ClO 4 ] 2 (where L is C 33 H 32 N 2 O 4 ) film on n-Si wafer have been stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dc5f55464396009d3790940f966e279
https://doi.org/10.1016/j.synthmet.2008.06.018
https://doi.org/10.1016/j.synthmet.2008.06.018
Autor:
K. Akkılıç, Fahrettin Yakuphanoglu
Publikováno v:
Microelectronic Engineering. 85:1826-1830
The electrical and photovoltaic properties of AuSb/n-Si/chitosan/Ag diode have been investigated. The ideality factor, barrier height and Richardson constant values of the diode at room temperature were found to be 1.91, 0.88 eV and 121.4 A/cm(2) K-2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86fca6e5bb12ed922c4fc70438d443b8
https://doi.org/10.1016/j.mee.2008.05.015
https://doi.org/10.1016/j.mee.2008.05.015
Publikováno v:
Synthetic Metals. 157:297-302
In this study, the film of chitosan by adding the solution of chitosan being a polymeric compound on the top of an n-Si substrate and then by evaporating solvent was formed. It was seen that the chitosan/n-Si contact demonstrated clearly rectifying b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aad286e23bb5a796140c05ce1b2a66e4
https://doi.org/10.1016/j.synthmet.2007.03.009
https://doi.org/10.1016/j.synthmet.2007.03.009
Publikováno v:
Applied Surface Science. 253:1304-1309
Cd/p-Si Schottky barrier diodes (SBDs) with and without the native oxide layer have been fabricated to determine the importance of the fact that the series resistance value is considered in calculating the interface state density distribution (ISDD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4161dae3ddecb8ee545d7c1178c36d
https://doi.org/10.1016/j.apsusc.2006.02.001
https://doi.org/10.1016/j.apsusc.2006.02.001
Publikováno v:
Physica B: Condensed Matter. 381:113-117
An Au/β-carotene/n-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound β-carotene in chloroform on top of an n-Si substrate, and then evaporating the solvent. The β-carotene/n-Si contact shows r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22898e3b87a8f970613e93563ec1cf36
https://doi.org/10.1016/j.physb.2005.12.254
https://doi.org/10.1016/j.physb.2005.12.254