Zobrazeno 1 - 10
of 23
pro vyhledávání: '"K. Ahmeda"'
Autor:
Ali Soltani, Brahim Benbakhti, S. J. Duffy, K. Ahmeda, Hassane Ouazzani Chahdi, M. Boucherta, Karol Kalna, Nour Eddine Bourzgui, Weidong Zhang, M. Mattalah
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
International audience; A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge
The thickness increase of gallium nitride (GaN) cap layer from 2 nm to 35 nm to achieve an enhancement mode GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) with a threshold voltage (Vth) of +0.5 V is studied using TCAD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd1ab3cd4b243d44f134d2c497adda1e
https://cronfa.swan.ac.uk/Record/cronfa55553
https://cronfa.swan.ac.uk/Record/cronfa55553
A study of the impact of dimension and temperature on a state of the art 4H-SiC power vertical DMOSFET has been carried out using drift-diffusion calculations in conjunction with electrical characterizations to extract physical parameters and doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d71df8027779a780dc3b3b3e5028354
https://cronfa.swan.ac.uk/Record/cronfa55865/Download/55865__18863__27a583feda014fec8ed37c60ff230244.pdf
https://cronfa.swan.ac.uk/Record/cronfa55865/Download/55865__18863__27a583feda014fec8ed37c60ff230244.pdf
Akademický článek
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Autor:
Hassan Maher, K. Ahmeda, Brahim Benbakhti, M. Boucherta, Weidong Zhang, Karol Kalna, Ali Soltani, S. J. Duffy, Nour-Eddine Bourzgui
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, Spain. pp.214-217, ⟨10.23919/EuMIC.2018.8539935⟩
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, Spain. pp.214-217, ⟨10.23919/EuMIC.2018.8539935⟩
International audience; The source/drain and gate induced charge trapping within an AlGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measureme
Publikováno v:
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS).
A potential link between traps located in the buffer and the AC/DC dispersion commonly observed in GaN HEMTs is studied by simulating the device in class A amplifier operations. We have revealed that acceptor traps located in the buffer at energy lev
Autor:
Brahim Benbakhti, Petar Igic, Soroush Faramehr, Ali Soltani, K. Ahmeda, Karol Kalna, S. J. Duffy
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement (TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and in
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
The effects of electric field induced traps generation in the drain access region is studied using industry standard TCAD, Atlas by Silvaco [1]. We show that the reduction in the cut-off frequency of the device from 13.9 (GHz) to 11.25 (GHz) could be
Akademický článek
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