Zobrazeno 1 - 10
of 19
pro vyhledávání: '"K. A. Serrels"'
Autor:
Peter Chua Thin Wei, Ng Kim Choo, Curt Lin, Kuyt Ku, Tang Chih-yi, Foo Loke Sheng, K. A. Serrels
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
Scan design, being part of the most commonly practiced form of Design for Testability (DFT) has been developed to enable software based diagnosis for scan chain failures. Tessent Diagnosis helps to narrow down the reported failures to a suspected fai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::441e793d3cec17ed23fedc410865a88a
https://doi.org/10.1109/ipfa47161.2019.8984846
https://doi.org/10.1109/ipfa47161.2019.8984846
Publikováno v:
International Symposium for Testing and Failure Analysis.
We present the first experimental demonstration of stuck-at scan chain fault isolation through the exploitation of Single Event Upsets (SEU) in a Laser-Induced Fault Analysis (LIFA) system. By observing a pass/fail flag, we can spatially map all flop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c26a468bf77848ab19aa764096c5a53
https://doi.org/10.31399/asm.cp.istfa2018p0093
https://doi.org/10.31399/asm.cp.istfa2018p0093
Publikováno v:
International Symposium for Testing and Failure Analysis.
We present an upgraded time-resolved LADA system, with a 25ps pulsed laser, integrated into a commercial laser scanning microscope used in failure analysis. We demonstrate the use of this system on 14nm/16nm finfet devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1a4d4f4f6f2e99116fbdc25984b1e51
https://doi.org/10.31399/asm.cp.istfa2017p0228
https://doi.org/10.31399/asm.cp.istfa2017p0228
Publikováno v:
Heriot-Watt University
The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost oct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd48d80c67492f160c89ff1dd2c12786
https://doi.org/10.1016/j.mee.2009.10.011
https://doi.org/10.1016/j.mee.2009.10.011
Publikováno v:
American Journal of Physics. 76:1002-1006
We demonstrate optical super-resolution (resolution better than conventional diffraction-limited resolution) in a simple optical configuration by using annular apertures to manipulate the pupil function of the system. The theoretical basis of the tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adaf57d4b78d6d8448bdaf1b95f1a5ec
https://doi.org/10.1119/1.2957887
https://doi.org/10.1119/1.2957887
Publikováno v:
Nature Photonics. 2:311-314
By using extreme numerical-aperture solid-immersion microscopy at 1553 nm we demonstrate, under certain circumstances, polarization-sensitive imaging with resolution values approaching 100 nm which substantially surpass the classical scalar diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f4abf995fdededc73b3b6cc096f257
https://doi.org/10.1038/nphoton.2008.29
https://doi.org/10.1038/nphoton.2008.29
Autor:
Mohammad R. Taghizadeh, Andrew J. Waddie, M. J. Thomson, Richard J. Warburton, Euan Ramsay, K. A. Serrels, Derryck T. Reid
Publikováno v:
Microelectronics Reliability. 47:1534-1538
Two- and three-dimensional sub-surface optical beam induced current imaging of a silicon flip-chip is described and is illustrated by results corresponding to 166 nm lateral resolution and an axial performance capable of localising feature depths to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::038f74e980223657cfc893c9650de37a
https://doi.org/10.1016/j.microrel.2007.07.069
https://doi.org/10.1016/j.microrel.2007.07.069
Autor:
T. R. Lundquist, C. Nemirow, Praveen Vedagarbha, C. Farrell, Derryck T. Reid, Dan Bodoh, Kent Erington, K. A. Serrels, Neel Leslie
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Laser-assisted device alteration is an established technique used to identify critical speed paths in integrated circuits. By using a synchronized pulsed laser, logic transition waveforms have been acquired that can be used to measure propagation del
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2edee4a1451e2c1b71ba1b4cb08275e5
https://doi.org/10.1109/irps.2014.6860638
https://doi.org/10.1109/irps.2014.6860638
Autor:
Kent Erington, C. Farrell, T. R. Lundquist, Dan Bodoh, K. A. Serrels, Neel Leslie, Derryck T. Reid, Praveen Vedagarbha
Publikováno v:
Optics express. 21(24)
Optoelectronic imaging of integrated-circuits has revolutionized device design debug, failure analysis and electrical fault isolation; however modern probing techniques like laser-assisted device alteration (LADA) have failed to keep pace with the se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b0607e4e9f7b84244b92cf0b8c5da8f
https://pubmed.ncbi.nlm.nih.gov/24514459
https://pubmed.ncbi.nlm.nih.gov/24514459
Autor:
Praveen Vedagarbha, Kent Erington, Dan Bodoh, C. Farrell, K. A. Serrels, Derryck T. Reid, Neel Leslie, T. R. Lundquist
Publikováno v:
CLEO: 2013.
By inducing two-photon absorption to perturb the switching characteristics of sensitive transistors located within the active layer of a proprietary 28-nm silicon test chip, we demonstrate time-resolved nonlinear laser-assisted device alteration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0142a0d2d09112619a48dbba2eda7dfd
https://doi.org/10.1364/cleo_at.2013.ath4k.2
https://doi.org/10.1364/cleo_at.2013.ath4k.2