Zobrazeno 1 - 5
of 5
pro vyhledávání: '"K. A. Ryden"'
Publikováno v:
Annales Geophysicae, Vol 20, Pp 953-956 (2002)
It is important to appreciate how the morphology of internal charging of spacecraft systems, due to penetrating electrons, differs from that of the more common surface charging, due to electrons with lower energy. A specific and recurrent anoma
Externí odkaz:
https://doaj.org/article/5aaa1ab137b94523a06916d1816a99c0
Autor:
C. S. Dyer, K. A. Ryden, P. A. Morris, A. D. P. Hands, P. J. McNulty, J. -R. Vaille, L. Dusseau, G. Cellere, A. Paccagnella, H. J. Barnaby, A. R. Benedetto, R. Velazco, R. Possamai Bastos, D. Brewer, J. L. Barth, K. A. LaBel, M. J. Campola, Y. Zheng, M. A. Xapsos
Publikováno v:
IEEE Transactions on Nuclear Science. 70:200-215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2b7cde00fb22098443e673342231af
https://doi.org/10.1109/tns.2023.3239734
https://doi.org/10.1109/tns.2023.3239734
Autor:
W B Bao, N H Haskins, C G Gonzalez, K R Ryden-Markinhutha, B G Gill, L G Guo, K J Jennbacken, Q W Wang, S H Hagvall
Publikováno v:
European Heart Journal. 43
Background Activin type ii receptor (ActRII) binding to its natural ligands including myostatin, activin, and growth development factor 11 negatively regulates muscle growth. Blockade of the ligands/ActRII signaling with human ActRII monoclonal antib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe13fa5f1974c65a99ba848fb37a786
https://doi.org/10.1093/eurheartj/ehac544.950
https://doi.org/10.1093/eurheartj/ehac544.950
Publikováno v:
Space Weather. 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e305ed0f594abc4a87cdf94824f00eb8
https://doi.org/10.1029/2022sw003155
https://doi.org/10.1029/2022sw003155
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 9:135-144
This paper describes the investigation of a Plasma-Induced Damage (PID) event in the metal stack of an 8-in 130-nm-high volume process line. The relevant PID stress and measurement sequence used during standard productive fast Wafer Level Reliability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8310ed3c6787a6222156b1cdb2cc9d90
https://doi.org/10.1109/tdmr.2009.2020601
https://doi.org/10.1109/tdmr.2009.2020601