Zobrazeno 1 - 10
of 32
pro vyhledávání: '"K. A. Kovalevsky"'
Autor:
R. Kh. Zhukavin, P. A. Bushuikin, V. V. Kukotenko, Yu. Yu. Choporova, N. Deßmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. V. Abrosimov, V. N. Shastin
Publikováno v:
Journal of Experimental and Theoretical Physics Letters, 116, 137-143
Journal of Experimental and Theoretical Physics Letters, 116, 3, pp. 137-143
Journal of Experimental and Theoretical Physics Letters, 116, 3, pp. 137-143
Contains fulltext : 283231.pdf (Publisher’s version ) (Closed access)
Autor:
Andreas Pohl, R.Kh. Zhukavin, Nils Deßmann, V. V. Tsyplenkov, Sergey Pavlov, Nickolay Abrosimov, Helge Riemann, Heinz-Wilhelm Hübers, K. A. Kovalevsky, V.N. Shastin
Publikováno v:
Semiconductors, 54, 969-974
Semiconductors, 54, 8, pp. 969-974
Semiconductors, 54, 8, pp. 969-974
The results of experimental and theoretical investigations of terahertz-emission-spectrum tuning by means of uniaxial stress of a silicon crystal doped with shallow bismuth donors are presented for the case of intracenter optical excitation. The freq
Autor:
H.-W. Hübers, K. A. Kovalevsky, R.Kh. Zhukavin, V.V. Tsyplenkov, N. Deßmann, V.N. Shastin, Yu. Yu. Choporova, P. A. Bushuikin, Nickolay Abrosimov, S.G. Pavlov, Boris A. Knyazev
Publikováno v:
SYNCHROTRON AND FREE ELECTRON LASER RADIATION: Generation and Application (SFR-2020).
The results of investigations of relaxation processes of donor bound electrons in the germanium doped by arsenic at cryogenic temperatures are presented. The lifetimes of p-type excited states of a donor were measured by pump-probe technique utilizin
Autor:
V. D. Kukotenko, R.Kh. Zhukavin, V.N. Shastin, Yu. Yu. Choporova, N. V. Abrosimov, Heinz-Wilhelm Hübers, K. A. Kovalevsky, V. V. Tsyplenkov, S.G. Pavlov, Boris A. Knyazev
The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ebfa6b82236611fdb3209b5e79e5409
https://elib.dlr.de/136639/
https://elib.dlr.de/136639/
Autor:
R. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin
Publikováno v:
Journal of Applied Physics, 127
Journal of Applied Physics
Journal of Applied Physics, 127, 3
Journal of Applied Physics
Journal of Applied Physics, 127, 3
The relaxation of electrons bound to bismuth donors in silicon and the effect of uniaxial stress have been studied using the time-resolved single color pump-probe technique. In unstressed Si:Bi, an excited 2p0 donor state is resonantly coupled with t
Autor:
R.Kh. Zhukavin, V. V. Tsyplenkov, Nickolay Abrosimov, Heinz-Wilhelm Hübers, S. G. Pavlov, K. A. Kovalevsky, V.N. Shastin
Publikováno v:
Semiconductors. 50:1673-1677
The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO2 laser (photon energy 117 meV), depending on the uniaxial compressive deformatio
Autor:
M. L. Orlov, V. V. Tsyplenkov, R.Kh. Zhukavin, K. A. Kovalevsky, N. Dessmann, Heinz-Wilhelm Hübers, D. V. Kozlov, V.N. Shastin
Publikováno v:
Semiconductors. 50:1458-1462
Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO2 laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature r
Autor:
D. V. Shengurov, S.G. Pavlov, Heinz-Wilhelm Hübers, Vladimir Rumyantsev, Yu. A. Astrov, V. V. Tsyplenkov, R.Kh. Zhukavin, V.N. Shastin, A. N. Lodygin, V. B. Shuman, Nickolay Abrosimov, K. A. Kovalevsky, J. M. Klopf, L. M. Portsel
Publikováno v:
XXIII International Symposium "Nanophysics and Nanoelectronics", 11.-14.03.2019, Nizhny Novgorod, RussiaSemiconductors 53(9), 1234-1237
The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76e1a4b14a31819600d8e2d2161d7e40
https://doi.org/10.1134/s1063782619090197
https://doi.org/10.1134/s1063782619090197
Autor:
V.N. Shastin, Nickolay Abrosimov, K. A. Kovalevsky, R.Kh. Zhukavin, V. V. Tsyplenkov, Heinz-Wilhelm Hübers, S.G. Pavlov
Publikováno v:
Quantum Electronics. 45:113-120
This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission (4.9 – 6.4 THz) from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline sil
Autor:
V.N. Shastin, Yu. Yu. Choporova, Nickolay Abrosimov, K. A. Kovalevsky, J. M. Klopf, R.Kh. Zhukavin, Britta Redlich, Heinz-Wilhelm Hübers, S.G. Pavlov, Boris A. Knyazev, V.V. Tsyplenkov, Yu. A. Astrov
Publikováno v:
EPJ Web of Conferences, Vol 195, p 07008 (2018)
EPJ Web of Conferences, 195, pp. 1-2
EPJ Web of Conferences, 195, 1-2
EPJ Web of Conferences, 195, pp. 1-2
EPJ Web of Conferences, 195, 1-2
Contains fulltext : 249552.pdf (Publisher’s version ) (Open Access)