Zobrazeno 1 - 2
of 2
pro vyhledávání: '"K. A. Hunnestad"'
Autor:
K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid, P. E. Vullum, Z. Yan, E. Bourret, A. T. J. van Helvoort, S. M. Selbach, D. Meier
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Small variations in the density of dopants change the physical properties of complex oxides. Here, the authors resolve doping levels in three dimension, imaging the atomic sites that donors occupy in the small band gap semiconductor Er(Mn,Ti)O3.
Externí odkaz:
https://doaj.org/article/8dc4d5121b9e4cbda218463281d098c0
Publikováno v:
Journal of Applied Physics
Ferroelectric domain walls are a completely new type of functional interface, which have the potential to revolutionize nanotechnology. In addition to the emergent phenomena at domain walls, they are spatially mobile and can be injected, positioned,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2928e0148730c5316e3ec1bcbaaaab2