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High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate
Autor:
Ulagalandha Perumal Dharanipathy, Nicolas Grandjean, Raphaël Butté, Romuald Houdré, J.-F. Carlin, N. Vico Triviño, A. Castiglia, Jacques Levrat, K. A. Atlasov, Georg Rossbach
Publikováno v:
APPLIED PHYSICS LETTERS
We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask