Zobrazeno 1 - 10
of 180
pro vyhledávání: '"K. Žďánský"'
Autor:
P. Lošťák, J. Walachová, Jindřich Chval, S. Karamazov, J. Vaniš, S. Vacková, Martin Pavelka, Miroslav Jelinek, K. Žďánský, R. Zeipl
Publikováno v:
physica status solidi (c). :867-871
Thin layers of Bi2Te3 60 nm thickness were prepared by laser ablation in vacuum using KrF excimer laser. The energy of laser varied from 300 to 680 mJ and the laser energy density from 2 to 10 J cm–2. The substrate temperature varied for different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70520eb17faa83a86f0f41a5d74531a4
https://doi.org/10.1002/pssc.200306251
https://doi.org/10.1002/pssc.200306251
Publikováno v:
physica status solidi (c). :862-866
Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by the Czochralski technique. The as-grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388bd081288f72e863bc5d18b3dee388
https://doi.org/10.1002/pssc.200306224
https://doi.org/10.1002/pssc.200306224
Publikováno v:
Czechoslovak Journal of Physics. 49:757-763
In this paper we pursue the effect of the erbium and ytterium addition during the liquid phase epitaxial (LPE) growth on physical properties of thin InP layers. Series of InP layer samples were prepared by LPE from the melts containing 0–0.3 wt.% o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d07dec7bdde0b7f29454b9dcfdec518
https://doi.org/10.1023/a:1021233006183
https://doi.org/10.1023/a:1021233006183
Publikováno v:
Czechoslovak Journal of Physics. 49:797-804
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs. Layers with thicknesses up to 7 µm were prepared in multi melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9928917ccd3dcb5c0854a4d7374a7d65
https://doi.org/10.1023/a:1021293224838
https://doi.org/10.1023/a:1021293224838
Autor:
K. Žďánský, I. D. Hawkins
Publikováno v:
Czechoslovak Journal of Physics. 49:813-821
Capacitance decay after termination of light was measured on Alx Ga1 −xAs/GaAs heterostructures with p-n junctions. It has been shown that the decay can be well expressed by two curves of stretched exponential forms; exp[−(t/τ)β]. The temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e291f89645f18c7a1de6ec638db5179e
https://doi.org/10.1023/a:1021297325747
https://doi.org/10.1023/a:1021297325747
Publikováno v:
Czechoslovak Journal of Physics. 49:765-774
The influence of rare-earth (RE) elements (Ho, Er and Nd) addition during the LPE growth, on electrooptical properties of InP layers is reported. Temperature dependent Hall effect and capacitance-voltage curves show quite a dramatic impact of Er and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d308cc33af8fb57f532ab564afcfc49
https://doi.org/10.1023/a:1021285023021
https://doi.org/10.1023/a:1021285023021
Publikováno v:
Czechoslovak Journal of Physics. 47:685-691
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied. Series of InP and GaInAsP layer samples have been prepared by LPE from the mel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c3b04a19f718a6f34f7efaf919c84ac
https://doi.org/10.1023/a:1021226516119
https://doi.org/10.1023/a:1021226516119
Publikováno v:
physica status solidi (b). 168:547-564
Using the self-consistent Greens' function method the neutral vacancy in silicon crystal is calculated. The calculation differs from that reported in original approach in using tight-binding approach also for the band structure and the Green's functi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fbb83cd1b6f6bcd02315f9f8c90e7b1
https://doi.org/10.1002/pssb.2221680215
https://doi.org/10.1002/pssb.2221680215
Autor:
K. Žďánský, Le Thanh Binh
Publikováno v:
Physica Status Solidi (a). 123:493-500
Degradation processes in AlGaAs/GaAs double heterostructure light emitting diodes (LEDs) are investigated by measuring of C—U and I—U characteristics, light output, DLTS and electroluminescence (EL) spectra. It is found that the DLTS peak, the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67027c75fa2603c9b646aa209f880eb
https://doi.org/10.1002/pssa.2211230214
https://doi.org/10.1002/pssa.2211230214
Publikováno v:
Chemical Papers. 61
Direct synthesis of lead iodide, a promising material for X-ray and γ detectors operating at room temperature, was developed and optimized. The influence of admixture of rare earth elements Ce, Ho, Gd, Yb, Er, and Tb in concentrations 0.05–0.5 at.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a1839dd79a95a6f56845cd0c184464c
https://doi.org/10.2478/s11696-006-0092-y
https://doi.org/10.2478/s11696-006-0092-y