Zobrazeno 1 - 10
of 50
pro vyhledávání: '"K.‐H. Bäther"'
Publikováno v:
Materialwissenschaft und Werkstofftechnik. 27:9-13
Durch Implantation von Stickstoff-Ionen wurde die Randschicht der Ti-Al6-V4-Legierung mit dem Ziel der Verbesserung des Verschleisverhaltens modifiziert. Es wurde dazu mit unterschiedlichen Stickstoffdosen bis 1 · 1018N+/cm2 bei E = 170 keV implanti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f44905b55e0762c054cb5adaa7c048
https://doi.org/10.1002/mawe.19960270106
https://doi.org/10.1002/mawe.19960270106
Autor:
K.-H. Bäther, U. Herrmann
Publikováno v:
Surface and Coatings Technology. :670-675
Polyimide foils were implanted with different ions (from light He + ions to heavy Ar + ions) in the energy region from 25 keV to 170 keV and ion doses from 1 x 10 15 to 2 x 10 17 ions cm −2 . The electrical properties (sheet resistivity), optical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c0664811d3def8e5af118c65d9d3cf
https://doi.org/10.1016/0257-8972(95)08267-0
https://doi.org/10.1016/0257-8972(95)08267-0
Publikováno v:
Surface and Coatings Technology. :793-801
The refractory metal nitrides Ti-N, Zr-N, V-N, Nb-N, Ta-N, Cr-N, Mo-N and W-N and in addition the Al-N and Si-N systems were deposited with conventional d.c. magnetron sputtering and with ion-beam-assisted deposition on thermally oxidized silicon waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ded11d50cfd4d83b8296d533245b57f
https://doi.org/10.1016/0257-8972(95)08277-8
https://doi.org/10.1016/0257-8972(95)08277-8
Publikováno v:
Vacuum. 44:827-835
Vacuum deposited high resistivity heating elements were developed for application in thermal print heads by using reactively sputtered CrSi(W)N. Analytical investigations on the temperature behaviour of the film system and loading studies by tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe2647c7342d75835e080486e75d89a
https://doi.org/10.1016/0042-207x(93)90316-3
https://doi.org/10.1016/0042-207x(93)90316-3
Autor:
K.-H. Bäther, H. Schreiber
Publikováno v:
Thin Solid Films. 200:93-116
The effect of TiNxOy barrier films (0 ⩽ x ⩽ 1.0;y ⩽ 0.12) on interdiffusion and interface reaction was investigated in Cr-Si-(O)/TiNxOy/Al layered films and compared with the results for Cr-Si-(O)/Al. The film systems were deposited on Si/SiO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::826ab87c7af402aa81e023c341dace57
https://doi.org/10.1016/0040-6090(91)90033-t
https://doi.org/10.1016/0040-6090(91)90033-t
Publikováno v:
Thin Solid Films. 188:67-83
The interactions in the (CrSi)/Al and (CrSiO)/Al film systems as a result of thermal load were investigated with regard to the electrical properties and the metallurgical stability. The layers were deposited on Si/SiO 2 and NaCl substrates u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57cac67f3b57e95d940cc39d0f0d5808
https://doi.org/10.1016/0040-6090(90)90194-i
https://doi.org/10.1016/0040-6090(90)90194-i
Autor:
G. Zies, K.‐H. Bäther
Publikováno v:
physica status solidi (a). 119:503-510
The effect of the film thickness on the metallurgical and electrical stability of CrSiO/VO/Al film systems is investigated. The film systems are prepared on Si/SiO2 substrates by dc planar magnetron sputtering in vacuum sequence. Their electrical res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cabbb5a8276608efce1242f8d0348c4
https://doi.org/10.1002/pssa.2211190213
https://doi.org/10.1002/pssa.2211190213
Publikováno v:
Physica Status Solidi (a). 67:533-542
The dc degradation behaviour of ZnO varistors as a function of the variables current, temperature, and time is investigated. The degradation rate is phenomenologically presented by an equation reflecting the observed aging behaviour in dependence on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f21cbbc854f0830a6920eaadbbe15f6
https://doi.org/10.1002/pssa.2210670223
https://doi.org/10.1002/pssa.2210670223
Autor:
K.-H. Bäther
Publikováno v:
Kristall und Technik. 9:1315-1325
Beim Schalten an Cu2O wird das Auftreten hoher Temperaturen nachgewiesen. Die Struktur des formierten Kanals wird untersucht. Auf der Grundlage des Phasendiagramms wird ein einfaches und qualitatives Modell fur den Durchschlag an Cu2O beschrieben und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aaabaf7b742c5dc7dc340ca3b38ba58
https://doi.org/10.1002/crat.19740091113
https://doi.org/10.1002/crat.19740091113
Autor:
K.‐H. Bäther, W. Brückner
Publikováno v:
Kristall und Technik. 11:991-998
The frequency distribution of the threshold voltage of AgCu2OAg switching devices was experimentally established. With a few switching cycles (n ≲ 150) distribution can be interpreted by a numerical Gauss distribution. Only a single, from electrode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb6c9365c2e62202a8074d15d1b9b68
https://doi.org/10.1002/crat.19760110912
https://doi.org/10.1002/crat.19760110912