Zobrazeno 1 - 10
of 166
pro vyhledávání: '"K-H Heinig"'
Autor:
M.-L. Pourteau, A. Gharbi, P. Brianceau, J.-A. Dallery, F. Laulagnet, G. Rademaker, R. Tiron, H.-J. Engelmann, J. von Borany, K.-H. Heinig, M. Rommel, L. Baier
Publikováno v:
Micro and Nano Engineering, Vol 9, Iss , Pp 100074- (2020)
SETs (Single-Electron-Transistors) arouse growing interest for their very low energy consumption. For future industrialization, it is crucial to show a CMOS-compatible fabrication of SETs, and a key prerequisite is the patterning of sub-20 nm Si Nano
Externí odkaz:
https://doaj.org/article/293532bf485e4b0bb8f502c2bf8aa57a
Autor:
J von Borany, H-J Engelmann, K-H Heinig, E Amat, G Hlawacek, F Klüpfel, R Hübner, W Möller, M-L Pourteau, G Rademaker, M Rommel, L Baier, P Pichler, F Perez-Murano, R Tiron
Publikováno v:
Semiconductor Science and Technology. 38:055011
This study addresses the complementary metal-oxide-semiconductor-compatible fabrication of vertically stacked Si/SiO2/Si nanopillars (NPs) with embedded Si nanodots (NDs) as key functional elements of a quantum-dot-based, gate-all-around single-elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70cc75628207d2fa354e36ca2239d2ab
https://doi.org/10.1088/1361-6641/acbe5d
https://doi.org/10.1088/1361-6641/acbe5d
Akademický článek
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Akademický článek
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Publikováno v:
Crystal Research and Technology. 40:1134-1138
Ge nanocluster formation in SiO2 is of growing interest for new electronic applications. Ion beam synthesis using high-energy Ge implantation connected with thermal annealing is one possible preparation method of such clusters. In addition to investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da19c4f6d34b0d17e66df38d44a8495
https://doi.org/10.1002/crat.200410505
https://doi.org/10.1002/crat.200410505
Autor:
Vincent Paillard, Alain Claverie, Caroline Bonafos, A. Wellner, K. H. Heinig, Bernd Schmidt, H. Coffin
Publikováno v:
Journal of Applied Physics, 94 (2003) 5639-5642
Ge nanocrystals embedded in thermal SiO2 on top of a Si substrate are investigated using Raman spectroscopy and transmission electron microscopy. We observe that the Raman peak frequency of the Ge nanocrystals is strongly affected by compressive stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77c289e39b327be1cfe179f2fe28f321
https://doi.org/10.1063/1.1617361
https://doi.org/10.1063/1.1617361
Akademický článek
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Publikováno v:
Material Scince and Engineering C 19 (2002) 209-213
arXiv:cond-mat/0108371 v1 23 Aug 2001
European Materials Research Society Spring Meeting E-MRS 2001, Strasbourg, France, June 5-8, 2001
arXiv:cond-mat/0108371 v1 23 Aug 2001
European Materials Research Society Spring Meeting E-MRS 2001, Strasbourg, France, June 5-8, 2001
The fabrication of more and more miniaturized electronic and photonic devices relies on new, ingenious methods for the fabrication of spatially controlled nanostructures. Examples are electronic devices based on semiconducting nanowires and photonic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ab803bb29574c440dd3b510c424c2e4
https://doi.org/10.1016/s0928-4931(01)00465-9
https://doi.org/10.1016/s0928-4931(01)00465-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 178:105-108
A novel atomic simulation approach to ion erosion of fcc(1 1 1) surfaces is presented. In a fully 3-D kinetic lattice Monte-Carlo (MC) model thermodynamically activated processes like adatom, step-edge or surface–vacancy diffusion are combined with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e249da3851d29b6fc2a5b61bf43b5f3c
https://doi.org/10.1016/s0168-583x(00)00498-5
https://doi.org/10.1016/s0168-583x(00)00498-5
Publikováno v:
Physics Letters A. 213:73-76
Spontaneous pattern formation of precipitates is analysed using the diffusion interaction between precipitates. A theoretical model for studying the instability of the Ostwald ripening process in a material near the critical radius of precipitates is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd11a48f67a8a6ee0682b33f591db342
https://doi.org/10.1016/0375-9601(96)00092-8
https://doi.org/10.1016/0375-9601(96)00092-8