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Autor:
Sestito, Simona1 (AUTHOR) ssestito@uniss.it, Ibba, Roberta2 (AUTHOR), Riu, Federico3 (AUTHOR), Carpi, Sara4,5 (AUTHOR), Carta, Antonio2 (AUTHOR), Manera, Clementina6 (AUTHOR), Habtemariam, Solomon7 (AUTHOR), Yeskaliyeva, Balakyz8 (AUTHOR) balakyz@mail.ru, Almarhoon, Zainab M.9 (AUTHOR), Sharifi‐Rad, Javad10,11 (AUTHOR) javad.sharifirad@gmail.com, Rapposelli, Simona6 (AUTHOR) simona.rapposelli@unipi.it
Publikováno v:
Food Science & Nutrition. Oct2024, Vol. 12 Issue 10, p6970-6989. 20p.
Autor:
C. G. Willison, Jeffrey R. LaRoche, Randy J. Shul, K. B. Jung, S. M. Donovan, Robert G. Wilson, Fan Ren, Stephen J. Pearton, H. Cho, C.R. Abernathy, Xian-An Cao, Rose Kopf, J. Han, Peter Chow, R. Hickman, J. M. Van Hove, L. Zhang, J. J. Klaassen, Albert G. Baca
Publikováno v:
Solid-State Electronics. 44:239-244
Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of ∼10 were achieved in 90 μm e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f2b88d9104c400528c6f2bfa4988261
https://doi.org/10.1016/s0038-1101(99)00229-4
https://doi.org/10.1016/s0038-1101(99)00229-4
Autor:
Randy J. Shul, K. B. Jung, Hyun Cho, Stephen J. Pearton, David C. Hays, Eric Lambers, William Scott Hobson, Y. B. Hahn, C. R. Abernathy
Publikováno v:
Plasma Chemistry and Plasma Processing. 20:405-415
High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both plamachemistries as a function of interhal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144f7f56fa9141856e1bee9d95a6cf66
https://doi.org/10.1023/a:1007000613045
https://doi.org/10.1023/a:1007000613045
Autor:
Hyun Cho, David C. Hays, C. R. Abernathy, Stephen J. Pearton, Randy J. Shul, William Scott Hobson, Y. B. Hahn, Eric Lambers, K. B. Jung
Publikováno v:
Plasma Chemistry and Plasma Processing. 20:417-427
A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c67cdbeceb576edad5a77392dfccf8cd
https://doi.org/10.1023/a:1007052629883
https://doi.org/10.1023/a:1007052629883
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:268-272
The magnetization of Cl2/Ar etched magnetic multilayer (NiFeCo/CoFe/Cu/CoFe/NiFeCo) structures used in magnetoresistive random access memory elements was measured over a period of ∼6 months. Very stable magnetic properties were achieved, with no ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4732a55ca5ff9c09efb58b84e368a6
https://doi.org/10.1116/1.582145
https://doi.org/10.1116/1.582145
Publikováno v:
Scopus-Elsevier
A number of different plasma chemistries were examined for dry etching of thin film Ta 2 O 5 . Maximum etch rates of ∼1200 A min -1 were achieved with SF 6 or Cl 2 discharges, while CH 4 /H 2 /Ar and N 2 /Ar produced rates an order of magnitude low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cacc4908166b1fbe9ed6846a66cd91fb
https://doi.org/10.1149/1.1392552
https://doi.org/10.1149/1.1392552
Publikováno v:
Journal of The Electrochemical Society. 146:3778-3782
High density plasma etching of (Ba, Sr)TiO 3 (BST) and LaNiO 3 (LNO) thin films was performed in two different plasma chemistries, Cl 2 /Ar and CH 4 /H 2 /Ar. While the latter chemistry produced extremely low etch rates (≤100 A min -1 ) under all c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f312881839ae78862591c441504e222b
https://doi.org/10.1149/1.1392549
https://doi.org/10.1149/1.1392549
Autor:
Y. B. Hahn, D. Johnson, D. C. Hays, Randy J. Shul, J. Donahue, Eric Lambers, K. B. Jung, S. J. Pearton
Publikováno v:
Journal of The Electrochemical Society. 146:3812-3816
Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to {approximately}8 {micro}m/min were achieved with pure SF{sub 6} discharges at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f47661becd795e019c6c75d01403266
https://doi.org/10.1149/1.1392556
https://doi.org/10.1149/1.1392556
Autor:
Srinivas V. Pietambaram, Stephen J. Pearton, Dhananjay Kumar, Yoon-Bong Hahn, Hyun Cho, K. P. Lee, K. B. Jung, Rajiv K. Singh, P. H. Hogan, Klaus Hermann Dahmen
Publikováno v:
Journal of The Electrochemical Society. 146:2748-2751
Effective pattern transfer into PrBaCaMnO 3 and LaSrMnO 3 has been achieved using Cl 2 /Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 A min -1 for LaSrMnO 3 and 300 A min -1 for PrBaCaMnO 3 were obtained, wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17630bd6c7c6905a1a5b979a3dce093f
https://doi.org/10.1149/1.1392004
https://doi.org/10.1149/1.1392004