Zobrazeno 1 - 3
of 3
pro vyhledávání: '"K V Vassilevski"'
Autor:
K. V. Vassilevski, V. E. Sizov
Publikováno v:
Wide Band Gap Electronic Materials ISBN: 9789401040785
The reactive ion etching of silicon carbide with fluorine containing plasmas have been studied. The fast etch rates of SiC up to 0.45 µm/min were obtained. The same etch rates were obtained for SiC and Si in SF6/O2 mixture.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6af638ff3b2c5dfbb1a60a033cac5f6
https://doi.org/10.1007/978-94-011-0173-8_43
https://doi.org/10.1007/978-94-011-0173-8_43
Publikováno v:
Wide Band Gap Electronic Materials ISBN: 9789401040785
This paper summaries the recent experimental results on silicon carbide and gallium nitride electronic devices. These semiconductors are far ahead in terms of device fabrication than other wide band gap materials because of progress in epitaxial grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::871ca6285dec0ab76551aed6837bbc52
https://doi.org/10.1007/978-94-011-0173-8_47
https://doi.org/10.1007/978-94-011-0173-8_47
Autor:
K V Vassilevski, N G Wright, I P Nikitina, A B Horsfall, A G O'Neill, M J Uren, K P Hilton, A G Masterton, A J Hydes and C M Johnson
Publikováno v:
Semiconductor Science & Technology; Mar2005, Vol. 20 Issue 3, p271-278, 8p
