Zobrazeno 1 - 10
of 24
pro vyhledávání: '"K V Smith"'
Autor:
K V Smith, K L DeLong, C N Boyer, J M Thompson, S M Lenhart, W C Strickland, E R Burgess, Y Tian, J Talley, E T Machtinger, R T Trout Fryxell
Publikováno v:
Journal of Integrated Pest Management. 13
Filth fly pests have a substantial impact on livestock production; annual losses from filth flies were estimated at over US$1.5 billion in 1981. Knowing filth fly management and animal production have changed significantly over the past 40 yr, our ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0820f12927e27d88e46d949bb20b0315
https://doi.org/10.1093/jipm/pmac010
https://doi.org/10.1093/jipm/pmac010
Autor:
K V Smith, K L DeLong, A P Griffith, C N Boyer, C C Martinez, S M Schexnayder, R T Trout Fryxell
Publikováno v:
Journal of economic entomology. 115(1)
Tennessee and Texas cow-calf producers were surveyed to assess their 2016 expenses for horn fly control methods. Cattle producers who were members of the Texas and Southwestern Cattle Raisers Association and Tennessee cattle producers who have partic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f27357671d885a84989bdf2bd52fbc67
https://pubmed.ncbi.nlm.nih.gov/34970979
https://pubmed.ncbi.nlm.nih.gov/34970979
Publikováno v:
Applied Physics Letters. 79:2749-2751
Local electronic properties in a molecular-beam-epitaxy-grown AlxGa1−xN/GaN heterostructure field-effect transistor epitaxial layer structure are probed using depth-resolved scanning capacitance microscopy. Theoretical analysis of contrast observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50466ae09d1fafc68d190d3f46eeefc7
https://doi.org/10.1063/1.1410342
https://doi.org/10.1063/1.1410342
Publikováno v:
Applied Physics Letters. 75:2250-2252
Scanning capacitance microscopy is used to characterize local electronic properties in an AlxGa1−xN/GaN heterostructure field-effect transistor epitaxial layer structure. Lateral inhomogeneity in electronic properties is clearly observed, at length
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d8facb8d0dc2d6c16ecf2d3b6fd66a
https://doi.org/10.1063/1.124980
https://doi.org/10.1063/1.124980
Autor:
P. M. Asbeck, C. H. Yun, A. B. Wengrow, K. V. Smith, Y. Zheng, R. J. Welty, Z. F. Guan, Nathan W. Cheung, S. S. Lau, Edward T. Yu
Publikováno v:
Applied Physics Letters. 73:2772-2774
The technique of transferring patterned ion-cut layers from one Si wafer to another was demonstrated. The starting silicon wafer was masked with checkerboard and line patterns with a 3 μm thick polymethylmethacrylate/photoresist and was implanted wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::760566c8f6150f1f64e75078c345e2f5
https://doi.org/10.1063/1.122586
https://doi.org/10.1063/1.122586
Autor:
Q. Z. Liu, L. Shen, Thomas F. Kuech, S. S. Lau, Edward T. Yu, N. R. Perkins, Charles W. Tu, K. V. Smith
Publikováno v:
Applied Physics Letters. 70:990-992
Epitaxy of Al films deposited on GaN has been studied using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), x-ray diffraction, and ion channeling techniques. Al (111) films have been found to grow epitaxially on Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53836fe117fb29759530b337c957741b
https://doi.org/10.1063/1.118458
https://doi.org/10.1063/1.118458
Autor:
K. V. Smith, E. T. Yu
Publikováno v:
2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).
Long-time-constant charge trapping behavior in Al/sub x/Ga/sub 1-x/N/GaN heterostructure field effect transistor epitaxial layer structures is probed using scanning capacitance microscopy. Localized charged areas, induced by scanning with relatively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f61dc99ddba0f395d90831f4362cd65
https://doi.org/10.1109/iscs.2000.947119
https://doi.org/10.1109/iscs.2000.947119
Publikováno v:
MRS Proceedings. 449
A variety of metal films deposited at room temperature have been found to grow epitaxially under conventional vacuum conditions on GaN grown by metalorganic vapor phase epitaxy on sapphire substrates. The metal films have been characterized by X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bf470016142f16d014b63d70619ee89
https://doi.org/10.1557/proc-449-1079
https://doi.org/10.1557/proc-449-1079
Publikováno v:
Nursing research. 43(1)
Factors that influenced exercise behaviors and aerobic fitness were identified in 100 outpatients with rheumatoid arthritis or osteoarthritis. Data included perceived health status, benefits of and barriers to exercise, and impact of arthritis on hea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6c87a754aa6ad437f75c678f64b9b4a6
https://pubmed.ncbi.nlm.nih.gov/8295833
https://pubmed.ncbi.nlm.nih.gov/8295833
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:2304
Charging effects in an AlxGa1−xN/GaN heterostructure field-effect transistor epitaxial layer structure have been studied using scanning capacitance microscopy. Voltages of ⩽6 V applied between an AlxGa1−xN/GaN sample structure and a conducting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ff3dcdcd3f837d083b43bcaeb0b303
https://doi.org/10.1116/1.1303738
https://doi.org/10.1116/1.1303738