Zobrazeno 1 - 10
of 140
pro vyhledávání: '"K Tsagaraki"'
Autor:
V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis, E. Aperathitis
Publikováno v:
Journal of Materiomics, Vol 5, Iss 3, Pp 428-435 (2019)
ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates. A multi-target rf-sputtering system was used for the growth of all oxide films as multilay
Externí odkaz:
https://doaj.org/article/2936bbce8bd842b6aea680bb580fb76f
Akademický článek
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Akademický článek
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Autor:
J. Kuzmík, A. Adikimenakis, M. Ťapajna, D. Gregušová, Š. Haščík, E. Dobročka, K. Tsagaraki, R. Stoklas, A. Georgakilas
Publikováno v:
AIP Advances, Vol 11, Iss 12, Pp 125325-125325-5 (2021)
AIP Advances
AIP Advances
Further progress of information technologies is hampered by the limited operational speed and frequency of contemporary electronic devices. Consequently, there is an intense quest for materials with the highest electron velocity. Over a decade, InN h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97e63d1cde308b331ec8e5efb68b7404
https://doaj.org/article/0ee6aafd45834f4ab68d2de0624de590
https://doaj.org/article/0ee6aafd45834f4ab68d2de0624de590
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
N Iftimie, Kyriakos Papadopoulos, A Meghea, K Tsagaraki, D. Dimotikali, Theodoros M. Triantis
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 152:11-16
It is believed that chemiluminescence (CL) of photolyzed aromatic compounds proceeds in alkaline media and in the presence of oxygen, with various reactive oxygen species (ROS). In order to prove this hypothesis we have investigated the contribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aaaaefa6cc92287518730fb8007ec5d
https://doi.org/10.1016/s1010-6030(02)00242-3
https://doi.org/10.1016/s1010-6030(02)00242-3
Publikováno v:
Materials Letters. 10:525-531
Lift off of GaAs epitaxial layers on Al x Ga 1− x As/Si has been accomplished by using a hot HF etch for the underlying AlGaAs. The resultant lifted structures were investigated by TEM in order to determine the thickness dependence of antiphase bou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4110788aa42b765530799a0d8d3ab68c
https://doi.org/10.1016/0167-577x(91)90221-q
https://doi.org/10.1016/0167-577x(91)90221-q
Autor:
D. Jalabert, M. Androulidaki, N.T. Pelekanos, E. Bellet-Amalric, E. Dimakis, K. Tsagaraki, A. Georgakilas, G. Kittler
Publikováno v:
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002..
We have investigated the growth of InAlGaN alloy thin films and InAlGaN/GaN quantum well (QW) heterostructures by rf plasma-assisted molecular beam epitaxy (RF-MBE). In-situ reflected high-energy electron diffraction (RHEED) was used to optimize the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::643d68dc70be6d34256d20db1b4f96f4
https://doi.org/10.1109/sim.2002.1242726
https://doi.org/10.1109/sim.2002.1242726
Autor:
E. Dimakis, M. Androulidaki, E. Bellet-Almaric, D. Jalabert, G. Kittler, Nikos T. Pelekanos, Georgakilas, K. Tsagaraki
Publikováno v:
International Conference on Molecular Bean Epitaxy.
We report on the growth by rf plasma-assisted molecular beam epitaxy (RF-MBE) of high quality quatemary InxAl1-xGa1-x-yN/GaN quantum well (QW) heterostructures, showing room temperature photoluminescence and lasing under optical pumping.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5929564344e750d2d5c731f4765ec09
https://doi.org/10.1109/mbe.2002.1037835
https://doi.org/10.1109/mbe.2002.1037835