Zobrazeno 1 - 10
of 95
pro vyhledávání: '"K Tittelbach-Helmrich"'
Autor:
Stavros Giannakopoulos, Ilias Sourikopoulos, Leontios Stampoulidis, Pylyp Ostrovskyy, Florian Teply, K. Tittelbach-Helmrich, Goran Panic, Gunter Fischer, Alexander Grabowski, Herbert Zirath, Philippe Ayzac, Norbert Venet, Anaëlle Maho, Michel Sotom, Shaun Jones, Grahame Wood, Ian Oxtoby
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier
Externí odkaz:
https://doaj.org/article/72880577c2644ab5bc600a41f9a68a36
Publikováno v:
2019 IEEE 31st International Conference on Microelectronics (MIEL).
The paper tackles an extremely important field of hardware/software co-design of wireless communication systems, which makes system and circuit designers aware of the physical implications and limitations, as well as technologists and physicists capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f22d2ddef05b828d5c9bddae8dd39766
https://doi.org/10.1109/miel.2019.8889653
https://doi.org/10.1109/miel.2019.8889653
Autor:
Z. Stamenkovic, K. Tittelbach-Helmrich
Publikováno v:
DDECS
The paper describes a hardware solution for a custom WLAN Medium Access Control (MAC) layer, designed for Industry Automation applications. Architecture and implementation details of the MAC processor including system simulation and test procedures a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5924b311ab22a95a2bb9b596932e8ee
https://doi.org/10.1109/ddecs.2016.7482465
https://doi.org/10.1109/ddecs.2016.7482465
Autor:
Eckhard Grass, Alfonso Troya, K. Tittelbach-Helmrich, Rolf Kraemer, Ulrich Jagdhold, K.F. Dombrowski, O. Kruger, Koushik Maharatna, J. Lehmann, P. Mahonen, G. Lippert, N. Fiebig
Publikováno v:
IEEE Personal Communications. 8:48-57
Broadband wireless communication is the key technology to a new generation of products in the consumer market. The emerging standards for the 5 GHz band will form the basis for many applications requiring a high communication bandwidth. Low cost and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad6c01cd5c0e23d7db7e2bdcb2cc2d4
https://doi.org/10.1109/98.972168
https://doi.org/10.1109/98.972168
Publikováno v:
Cryogenics. 38:613-618
We demonstrate for the first time the capability of tunnel MOS emitter transistors to operate in the temperature range from 300 K down to 4.2 K without reduction of current gain. This device suffers much less from carrier freeze out than conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06da995c64ed4425c2dbde7edd514129
https://doi.org/10.1016/s0011-2275(98)00021-6
https://doi.org/10.1016/s0011-2275(98)00021-6
Publikováno v:
Journal of Applied Physics. 83:5258-5263
Experimental results are presented on the electrical properties of lightly boron doped bulk Si1−xGex as a function of the Ge content x in the range 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20356a2e94e1df1ada41abb58a41ea4e
https://doi.org/10.1063/1.367348
https://doi.org/10.1063/1.367348
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1995, 05 (C5), pp.C5-283-C5-290. ⟨10.1051/jphyscol:1995533⟩
Journal de Physique IV Proceedings, EDP Sciences, 1995, 05 (C5), pp.C5-283-C5-290. ⟨10.1051/jphyscol:1995533⟩
A simple classification scheme of low pressure chemical vapor deposition processes is discussed which is based on only three different one-dimensional models of the radial film thickness distribution on silicon wafers processed in a conventional hori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fb7baa37620ec8970e8cafdcff298c3
https://doi.org/10.1051/jphyscol:1995533
https://doi.org/10.1051/jphyscol:1995533
Autor:
G. Morgenstern, H. Kühne, K. Tittelbach-Helmrich, P. Gaworzewski, D. Krüger, Klaus Schmalz, Peter Zaumseil, I. Babanskaya, Th. Morgenstern
Publikováno v:
Solid State Phenomena. :409-416
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1378056de92295989d7e8fd41c5cff3c
https://doi.org/10.4028/www.scientific.net/ssp.32-33.409
https://doi.org/10.4028/www.scientific.net/ssp.32-33.409
Autor:
K Tittelbach-Helmrich
Publikováno v:
Measurement Science and Technology. 4:1323-1329
A new algorithm is introduced to analyse multiexponential transient signals optionally including a non-zero baseline. It requires a digitized transient and allows one to determine time constants and amplitudes of discrete components which are suppose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c30b83ae2a66a3c8475079ee67681f1f
https://doi.org/10.1088/0957-0233/4/12/003
https://doi.org/10.1088/0957-0233/4/12/003
Autor:
K Tittelbach-Helmrich
Publikováno v:
Semiconductor Science and Technology. 8:1372-1376
Simulations of apparent doping profiles as obtained from C-V measurements at pn or Schottky diodes are used to analyse data measured at a Si-SiGe-Si single quantum well device. C-V characteristics are simulated by numerically solving Poisson's equati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b1d269a54f0035358ac81e02897bcf8
https://doi.org/10.1088/0268-1242/8/7/029
https://doi.org/10.1088/0268-1242/8/7/029