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pro vyhledávání: '"K Scarrott"'
Akademický článek
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Autor:
A.T.R. Briggs, Martyn J. Fice, Peter David Greene, A. Vranic, Eoin P. O'Reilly, G. Jones, A.D. Smith, K. Scarrott, M. Silver, Alf R. Adams
Publikováno v:
IEEE Journal of Quantum Electronics. 34:822-833
A systematic study has been undertaken including growth, characterization, and modeling of tensile-strained multiple-quantum-well (MQW) lasers with emission wavelengths in the neighborhood of 1.5 /spl mu/m. The laser threshold increases between 0% an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da2797103532604615dc6e3f24cca5e
https://doi.org/10.1109/3.668770
https://doi.org/10.1109/3.668770
Publikováno v:
Journal of Crystal Growth. 145:764-770
A fifty period multiple quantum well stack composed of alternating layers of GaInAsP (100 A, + 1% lattice mismatch) and GaInAsP (100 A, -1% lattice mismatch) has been grown with a minimum of strain relaxation. The strain-compensated structure was ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8939d51f3acd58c43bdda04d4528af1
https://doi.org/10.1016/0022-0248(94)91140-1
https://doi.org/10.1016/0022-0248(94)91140-1
Publikováno v:
Journal of Applied Physics. 73:4297-4304
The structural characterization by electron microscopy of a metalorganic chemical vapor deposition grown GaInAs/GaInAsP multiple‐quantum‐well structure undergoing a ‘‘blue shift’’ in luminescence wavelength upon thermal processing, as par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78bb84f63285163530ccc24d523c17a1
https://doi.org/10.1063/1.352812
https://doi.org/10.1063/1.352812
Publikováno v:
Applied Physics Letters. 65:2311-2313
The results of an investigation into the growth of Ga0.32In0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2f5e9e834757f8e8580b41f6b85f13b
https://doi.org/10.1063/1.112727
https://doi.org/10.1063/1.112727
Autor:
K. Scarrott, B.L. Patel, C.J. Armistead, I.K. Czajkowski, A.D. Smith, C.J. Jones, P.D. Greene, M.A. Gibbon, A.T.R. Briggs, E.J. Thrush, R.W. Glew
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
Devices based upon the monolithic integration of a distributed feedback (DFB) laser with an electroabsorption modulator offer considerable promise as the next generation of sources for high speed optical communication systems. Their advantage over di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e04db149c90cecf4c3a92766c6ebfce8
https://doi.org/10.1109/iciprm.1994.328163
https://doi.org/10.1109/iciprm.1994.328163
Publikováno v:
Solid State Communications. 73:1-3
The pressure dependence of the R lines from the luminescence of Cr-doped Ga 2 O 3 at 85 K as been determined using a diamond anvil cell to pressures of 5 GPa. The R 1 line shows a pressure shift of 9.48 A GPa -1 , nearly three times that of ruby, ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0f3eedf57dc1ff7201509a8d22fe803
https://doi.org/10.1016/0038-1098(90)90002-s
https://doi.org/10.1016/0038-1098(90)90002-s
Autor:
Robin J. Nicholas, J. Thompson, Siu Ling Wong, N. J. Long, B Hamilton, Andrew G. Norman, K Scarrott, Robert W. Martin, G.R. Booker, A Chew, D.E. Sykes, R. E. Mallard, J M Jowett, Klaus Satzke, R E Pritchard, S A Galloway, E J Thrush
Publikováno v:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 8(6)
The authors report on the structural and optical characterization of nominally lattice-matched GaInAs/GaInAsP multiple quantum well (MQW) structures grown on (100) InP substrates by metalorganic chemical vapour deposition (MOCVD) which undergo a 'blu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87aa5d2526a61b7f998cc7bb26390d7a
http://ora.ox.ac.uk/objects/uuid:af930ac4-9719-4f99-8c4b-35dba01ca424
http://ora.ox.ac.uk/objects/uuid:af930ac4-9719-4f99-8c4b-35dba01ca424
Publikováno v:
MRS Proceedings. 295
We report on an investigation into the interfacial structure of undoped GaInAs/GaInAsP multiple quantum wells grown by metalorganic chemical vapour deposition (MOCVD), which exhibit a pronounced blue shift in luminescence output upon in-situ thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46830a9159d3192a111b3950edb3a39a
https://doi.org/10.1557/proc-295-121
https://doi.org/10.1557/proc-295-121
Akademický článek
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