Zobrazeno 1 - 10
of 316
pro vyhledávání: '"K S Zhuravlev"'
Publikováno v:
Journal of Experimental and Theoretical Physics. 135:215-225
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers
Publikováno v:
Semiconductors. 56:352-359
Publikováno v:
Semiconductors. 56:340-345
Publikováno v:
Semiconductors. 55:823-827
Autor:
K. S. Zhuravlev, A. M. Gilinsky, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk
Publikováno v:
Technical Physics. 66:1072-1077
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 57:526-531
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 57:451-457
Publikováno v:
Technical Physics Letters. 47:692-695
Autor:
S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii, I. A. Rogachev, E. V. Tereshkin, S. V. Shcherbakov
Publikováno v:
Technical Physics Letters. 47:329-332
Publikováno v:
Technical Physics Letters. 47:139-142
Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transisto