Zobrazeno 1 - 10
of 62
pro vyhledávání: '"K S, Ang"'
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 5, Pp 1-6 (2014)
Thermal resistance and optical evanescent coupling of InP-based waveguide uni-traveling carrier photodiode (UTC-PD) integrated on silicon on insulator (SOI) through novel Al2O3 bonding layer have been investigated with a constant heat spreading model
Externí odkaz:
https://doaj.org/article/7c0674d41e8b418e878fde05877e26ec
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 6:1549-1554
This paper presents the detailed design, fabrication, and measurement of cavity resonators and filters for silicon (Si)-based millimeter-wave integrated circuits. The design of the cavity resonators and filters is conducted using Ansoft High Frequenc
Publikováno v:
2017 IEEE Photonics Conference (IPC).
InAs/InGaAs quantum dot mode-locked lasers are fabricated and characterized. The modal gain as the saturable absorber voltage (SAV) changes is investigated. The ground state lasing dominates at low SAV, and excited state transition emerges when SAV i
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 5, Pp 1-6 (2014)
Thermal resistance and optical evanescent coupling of InP-based waveguide uni-traveling carrier photodiode (UTC-PD) integrated on silicon on insulator (SOI) through novel Al2O3 bonding layer have been investigated with a constant heat spreading model
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
The band alignments between Atomic-Layer-Deposited (ALD) high-k ZrO 2 and wide bandgap semiconductors: GaN, AlN and SiC were investigated using X-ray photoelectron spectroscopy (XPS). Based on angle-resolved XPS measurements combined with numerical c
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
In this paper, we report high-performance InP-based UTC-PDs with dipole-doped structure at 1.55 µm wavelength. It is experimentally demonstrated that UTC-PD can achieve both a high photocurrent and a fast photoresponse with high 3-dB bandwidth over
Publikováno v:
Journal of Mechanics in Medicine and Biology. :457-471
Tracheobronchial stents are used in the treatment of inoperable stenoses of the respiratory tracts and their purpose is to restore patency to the stenosed conduits or to provide scaffolding to these channels when they are weak. In this paper, the lab
Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure
Publikováno v:
Asia Communications and Photonics Conference 2014.
An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data. Published
Autor:
Y. Li, G. I. Ng, S. Arulkumaran, Z. H. Liu, K. Ranjan, W. C. Xing, K. S. Ang, P. P. Murmu, J. Kennedy
Publikováno v:
physica status solidi (a). 214:1600555
We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I–V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al 0.26 Ga 0.74 N/GaN HEMT str
Publikováno v:
Journal of Adhesion Science and Technology. 14:897-914
A novel method for preparing composites of polyimides (PI) laminated to poly(tetrafluoroethylene) (PTFE) films is reported. PI/PTFE composites were developed through thermal imidization of poly(amic acid) (PAA) precursors on surface-modified PTFE fil