Zobrazeno 1 - 10
of 48
pro vyhledávání: '"K R Gunasekhar"'
Autor:
Sanath Kumar Honnali, Vikram Srinivasa Raghavan, Roopa Ashwath, Ganapathy Saravanavel, K. R. Gunasekhar, Sanjiv Sambandan, Sai Siva Gorthi, Benjamin O'Driscoll, David Jenkins
Publikováno v:
IEEE Sensors Journal. 22:21209-21217
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ce93446c74d37c7656c9e6c7f639a5
https://doi.org/10.1109/jsen.2022.3207467
https://doi.org/10.1109/jsen.2022.3207467
Autor:
Sanath Kumar Honnali, Vikram Srinivasa Ragha, Roopa Ashwath, Ganapathy Saravanavel, K R Gunasekhar, Sanjiv Sambandan, Sai Siva Gorthi, Benjamin O’Driscoll, David Jenkins
Background: Contamination of lead (Pb 2+) disturbs biological functions and causes neurotoxicity even at low levels. Pathogens such as Escherichia coli, P. aeruginosa and S. aureus found in packaged drinking water causes infections. Therefore, we dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96223521dea3cafbac4c4b1108e13d4f
https://doi.org/10.21203/rs.3.rs-1593963/v1
https://doi.org/10.21203/rs.3.rs-1593963/v1
Publikováno v:
Iranian Journal of Science and Technology, Transactions A: Science. 43:2665-2671
In this study, nanostructured titanium (Ti) thin films were prepared by direct current magnetron sputtering (diode mode) and supported discharge (triode mode) on a stainless steel substrate. The X-ray diffraction pattern shows a preferred orientation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ac87f5d4781562fe7c349a0d0ebc3c
https://doi.org/10.1007/s40995-019-00723-3
https://doi.org/10.1007/s40995-019-00723-3
Autor:
K. R. Gunasekhar, Varra Niteesh Reddy
Publikováno v:
Journal of Electronic Materials. 47:6458-6466
The interface properties of a Au/n-GaN Schottky junction (SJ) were modified by placing a high-k barium strontium titanate (Ba0.6Sr0.4TiO3) insulating layer between the Au and n-GaN semiconductor. The surface morphology, chemical composition, and elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4794e7d75de511f072d8d6db33bb12d6
https://doi.org/10.1007/s11664-018-6539-4
https://doi.org/10.1007/s11664-018-6539-4
Publikováno v:
Journal of Electronic Materials. 46:5773-5780
Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81961a47d54b662e2b9bdaba0bc57ea8
https://doi.org/10.1007/s11664-017-5608-4
https://doi.org/10.1007/s11664-017-5608-4
Publikováno v:
Applied Physics A. 124
This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current–voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9548277f5dab28f9894500a90b392be2
https://doi.org/10.1007/s00339-018-1708-0
https://doi.org/10.1007/s00339-018-1708-0
Analysis of electronic parameters and frequency-dependent properties of Au/NiO/n-GaN heterojunctions
Publikováno v:
Applied Physics A. 124
The electrical and frequency-dependent properties of ten Au/NiO/n-GaN heterojunctions fabricated with similar conditions are assessed by I–V, C–V, and G–V measurement methods. In addition, C–f and G–f measurements are conducted in the frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02b50eafdfc4527a789834370b0b47e4
https://doi.org/10.1007/s00339-017-1483-3
https://doi.org/10.1007/s00339-017-1483-3
Publikováno v:
AIP Conference Proceedings.
Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (ITO) substrates by using thermal evaporation technique at optimized deposition conditions. Here, SnS films were deposited at a substrate temperature of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7062c6bf89e65ccd168beb0f117e3302
https://doi.org/10.1063/1.5047968
https://doi.org/10.1063/1.5047968
Publikováno v:
Thin Solid Films. 558:326-329
The contact behavior of tin mono sulfide (SnS) nanocrystalline thin films with zinc (Zn) and silver (Ag) contacts was studied. SnS films have been deposited on glass substrates by thermal evaporation technique at a growth temperature of 300 degrees C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::865d931d5a7cabe16166ed9653307c62
https://doi.org/10.1016/j.tsf.2014.02.083
https://doi.org/10.1016/j.tsf.2014.02.083
Autor:
M. Devika, Yoon-Bong Hahn, K. P. Ramesh, K. R. Gunasekhar, N. Koteeswara Reddy, M. Prashantha, S. Venkatramana Reddy
Publikováno v:
physica status solidi (a). 207:1864-1869
The development of high-quality tin monosulphide (SnS) layers is one of the crucial tasks in the fabrication of efficient SnS-based optoelectronic devices. Reduction of strain between film and the substrate by using an appropriate lattice-matched (LM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1c0a23e0b06aaa825b1c415c8e03eb3
https://doi.org/10.1002/pssa.200925379
https://doi.org/10.1002/pssa.200925379