Zobrazeno 1 - 10
of 35
pro vyhledávání: '"K P O'Donnell"'
Autor:
K. Tchalova, J. E. Lydon, L. Atkinson, A. S. Fleming, J. Kennedy, V. Lecompte, M. J. Meaney, E. Moss, K. A. O’Donnell, K. J. O’Donnell, P. P. Silveira, M. B. Sokolowski, M. Steiner, J. A. Bartz
Publikováno v:
Translational Psychiatry, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract The endogenous opioid system is thought to play an important role in mother-infant attachment. In infant rhesus macaques, variation in the μ-opioid receptor gene (OPRM1) is related to differences in attachment behavior that emerges followin
Externí odkaz:
https://doaj.org/article/39e313998cba4635a346a1546d962129
Publikováno v:
Earth's Future, Vol 12, Iss 7, Pp n/a-n/a (2024)
Abstract A changing climate and growing coastal populations exacerbate the outcomes of environmental hazards. Large‐scale flooding and acute disasters have been extensively studied through historic and current data. Chronic coastal flooding is less
Externí odkaz:
https://doaj.org/article/10ac5725ef774ea5843c61e6aa61d590
Autor:
L. C. Perret, M-C. Geoffroy, E. Barr, F. Parnet, N. Provencal, M. Boivin, K. J. O’Donnell, M. Suderman, C. Power, G. Turecki, I. Ouellet-Morin
Publikováno v:
Frontiers in Cell and Developmental Biology, Vol 10 (2023)
Background: Prior studies indicate that peer victimization (including bullying) is associated with higher risk for depression and suicidal ideation across the life course. However, molecular mechanisms underlying these associations remain unclear. Th
Externí odkaz:
https://doaj.org/article/bbafccd1b432468bb445f0b1d75fd624
Autor:
N Dontschuk, LVH Rodgers, JP Chou, DA Evans, K M O’Donnell, HJ Johnson, A Tadich, AK Schenk, A Gali, NP de Leon, A Stacey
Publikováno v:
Materials for Quantum Technology, Vol 3, Iss 4, p 045901 (2023)
Identifying the surface chemistry of diamond materials is increasingly important for device applications, especially quantum sensors. Oxygen-related termination species are widely used because they are naturally abundant, chemically stable, and compa
Externí odkaz:
https://doaj.org/article/1c866c1868c34661af0e963c895e4186
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284ca39809bf1dde6ce98e2fe34aae66
https://doi.org/10.1201/9781351074636-68
https://doi.org/10.1201/9781351074636-68
Autor:
S Dalmasso, R W Martin, P R Edwards, K P O'Donnell, B Pipeleers, A Vantomme, Y Nakanishi, A Wakahara, A Yoshida
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d4b61b1522aaa1024532371a2f286d
https://doi.org/10.1201/9781351074636-125
https://doi.org/10.1201/9781351074636-125
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 6:49-52
The design strategy presently employed to obtain ‘white’ light from semiconductors combines the emission of an InGaN blue or UV light-emitting diode (LED) with that of one or more yellow-orange phosphors. While commercially successful, this appro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a04c468cb1a4ba5e9278031f41289bf
https://doi.org/10.1002/pssr.201100206
https://doi.org/10.1002/pssr.201100206
Autor:
K. P. O'Donnell, Benjamin Hourahine
Publikováno v:
The European Physical Journal Applied Physics. 36:91-103
Rare-earth (RE) doped III-nitrides, prepared by in-situ doping during growth or by ion im- plantation and annealing, are promising materials for visible light emitting displays. In addition, they are extremely challenging theoretically, on account of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab473a96aff56c3103f4829f733529cd
https://doi.org/10.1051/epjap:2006122
https://doi.org/10.1051/epjap:2006122
Publikováno v:
Applied Physics Letters. 60:2672-2674
The luminescence decay of excitons in disordered low‐dimensional semiconductors with quantum confinement is shown experimentally to be characterized by a nonexponential profile and an absence of spectral diffusion. We are able to describe this lumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd5a67d20e52320f106f6409445f0ce
https://doi.org/10.1063/1.106891
https://doi.org/10.1063/1.106891
Autor:
K. P. O’Donnell, X. Chen
Publikováno v:
Applied Physics Letters. 58:2924-2926
In this letter we advocate the use of a new three-parameter fit to the temperature dependence of semiconductor band gaps. This fitting improves upon the semi-empirical Varshni equation* both numerically, since it gives better fits to the data, and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::565eaeaa166f4bd6eed5d064ae46db4b
https://doi.org/10.1063/1.104723
https://doi.org/10.1063/1.104723