Výsledky vyhledávání

Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes

Autor: M. Ekielski, A. S. Sokolovskii, Vladimir G. Dubrovskii, K. Klosek, M. Sobanska, Zbigniew R. Zytkiewicz

Publikováno v: Crystal Growth & Design. 20:4770-4778

Selective area epitaxial growth of III–V and III–N nanostructures and nanowires was proven efficient for synthesis of scalable and highly ordered electronic and optoelectronic nanomaterials on diss...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68d0e87c2d76aff38864aa04b303544d
https://doi.org/10.1021/acs.cgd.0c00530

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Chemical bonding of nitrogen formed by nitridation of crystalline and amorphous aluminum oxide studied by X-ray photoelectron spectroscopy

Autor: Sylwia Gieraltowska, M. Sobanska, Zbigniew R. Zytkiewicz, Piotr Kuzmiuk, K. Klosek, Krystyna Lawniczak-Jablonska

Publikováno v: RSC Advances. 10:27932-27939

Numerous efforts have already been made to optimize nitridation of crystalline sapphire (c-Al2O3) substrates whereas very little attention has been paid to nitridation of amorphous aluminum oxide layers (a-AlOx). An extensive analysis of the reaction

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71f6d1d74f5364acc2eee14bbe4865b0
https://doi.org/10.1039/d0ra05104g

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Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

Autor: Zbigniew R. Zytkiewicz, K. Klosek, M. Sobanska, Ana Cros, Núria Garro

Publikováno v: Electronics
Volume 9
Issue 11
Electronics, Vol 9, Iss 1904, p 1904 (2020)

The growth of GaN nanowires having a polar, wurtzite structure on nonpolar Si substrates raises the issue of GaN nanowire polarity. Depending on the growth procedure, coexistence of nanowires with different polarities inside one ensemble has been rep

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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application

Autor: Wojciech Mech, Wojciech Sadowski, Krzysztof P. Korona, Zbigniew R. Zytkiewicz, S. Chusnutdinow, Giorgi Tchutchulashvili, M. Sobanska, K. Klosek

Publikováno v: Journal of Nanoparticle Research. 22

Poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures int

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be5a3da2031500fbe5bdb4c7dcfddbe7
https://doi.org/10.1007/s11051-020-04797-8

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Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array

Autor: P. Kaźmierczak, Zbigniew R. Zytkiewicz, Maria Kaminska, K. Klosek, Rafał Bożek, Jakub Kierdaszuk, M. Sobanska, Justyna Grzonka, Agnieszka Wołoś, Andrzej Wysmołek, Aneta Drabińska, Aleksandra Krajewska

Publikováno v: Carbon. 128:70-77

A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3495e4fc2dbfcb5ac9cfdc0e22d404eb
https://doi.org/10.1016/j.carbon.2017.11.061

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Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer

Autor: G. Tchutchulashvili, M. Sobanska, Roman Minikayev, Jaroslaw Z. Domagala, Jolanta Borysiuk, A. Wierzbicka, K. Klosek, Zbigniew R. Zytkiewicz

Publikováno v: Applied Surface Science. 425:1014-1019

X-ray diffraction measurements with the use of both laboratory and synchrotron X-ray sources and transmission electron microscopy have been applied to study two types of GaN nanowires grown by plasma assisted molecular beam epitaxy on Si (001) substr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b23da5cb978358fe4f4349791158a605
https://doi.org/10.1016/j.apsusc.2017.07.075

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Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface

Autor: M. Sobanska, Zbigniew R. Zytkiewicz, Jan Misiewicz, Robert Kudrawiec, Łukasz Janicki, Marta Gladysiewicz, K. Klosek, Pawel Kempisty

Publikováno v: Applied Surface Science. 396:1657-1666

In this paper we show that the surface Fermi level of Ga-polar GaN exhibits a bistable behavior allowing it to be located at two distinct energetic positions at the air/GaN interface which is unusual for other III–V semiconductors such as GaAs or G

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aea7d70b7918716f3999115ade363cbc
https://doi.org/10.1016/j.apsusc.2016.12.013

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Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism

Autor: Vladimir G. Dubrovskii, G. Tchutchulashvili, K. Klosek, Zbigniew R. Zytkiewicz, M. Sobanska

Publikováno v: Crystal Growth & Design. 16:7205-7211

Surprisingly long incubation times for the self-induced formation of GaN nanowires on different substrates can reach hundreds of minutes and remain a mystery in GaN crystal growth. Herein, we examine the incubation times of GaN islands that subsequen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7470ebdff31c32b7dcfe5f1b7e673cf3
https://doi.org/10.1021/acs.cgd.6b01396

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Autor: Kamil Koronski, Dmitrii V. Nechaev, Zbigniew R. Zytkiewicz, Vladimir Pankratov, Pawel Strak, K. Klosek, Agata Kaminska, M. Sobanska, Kirill Chernenko, Stanislaw Krukowski, A. Wierzbicka

Publikováno v: Applied Physics Letters. 117:232101

We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::052208604eb807e86a654b7a40c4a390
https://doi.org/10.1063/5.0027743

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Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer

Autor: Zbigniew R. Zytkiewicz, M. Ekielski, Sylwia Gieraltowska, Renata Kruszka, K. Klosek, M. Sobanska, Krystyna Gołaszewska

Publikováno v: Nanotechnology. 31:184001

Examples are presented that application of amorphous Al x O y nucleation layer is an efficient way of controlling spatial distribution of GaN nanowires grown by plasma-assisted molecular beam epitaxy. On GaN/sapphire substrates Al x O y stripes induc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d5c0918bbe4de4e0fe03f8c13de5f93
https://doi.org/10.1088/1361-6528/ab6bf2

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