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Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation.

Autor: Liu, Lei^1,2 (AUTHOR), Gao, Peng^1,2 (AUTHOR), Zhang, Mengru^1,2 (AUTHOR), Dou, Jiadu¹ (AUTHOR), Liu, Chunsen^1,2 (AUTHOR), Shi, Tuo³ (AUTHOR), Huang, Hao⁴ (AUTHOR), Wang, Chunlan⁵ (AUTHOR), He, Han⁴ (AUTHOR), Chen, Zijun⁴ (AUTHOR), Chai, Yang⁶ (AUTHOR), Wang, Jianlu¹ (AUTHOR), Zou, Xuming⁷ (AUTHOR), Liao, Lei⁷ (AUTHOR) liaolei@hnu.edu.cn, Wang, Jingli^1,2 (AUTHOR) jliwang@fudan.edu.cn, Zhou, Peng^1,2 (AUTHOR) pengzhou@fudan.edu.cn

Publikováno v: Advanced Science. 12/4/2024, Vol. 11 Issue 45, p1-10. 10p.

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Negative Differential Resistance in Single Crystal CVD Diamond. Applications: Construction of a high-power microwave relaxation oscillator, Anti-collision radar, Medical imaging

Autor: S Majdi, N Suntornwipat, M Gabrysch, K K Kovi, J Hammersberg, J Isberg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0907ae95c4c78200a942a688c347feba

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Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters.

Autor: Giubileo, Filippo, Faella, Enver, Capista, Daniele, Passacantando, Maurizio, Durante, Ofelia, Kumar, Arun, Pelella, Aniello, Intonti, Kimberly, Viscardi, Loredana, De Stefano, Sebastiano, Martucciello, Nadia, Craciun, Monica F., Russo, Saverio, Di Bartolomeo, Antonio

Publikováno v: Nanoscale; 9/21/2024, Vol. 16 Issue 35, p16718-16728, 11p

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Akademický článek

Valley-dependent quasi-ballistic electron transport in FETs based on multi-valley semiconductors.

Autor: Yelisieiev, M., Kochelap, V. A.

Publikováno v: AIP Advances; Jul2024, Vol. 14 Issue 7, p1-7, 7p

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Akademický článek

Quantum efficiency, photoemission energy spectra, and mean transverse energy of ultrananocrystalline diamond photocathode.

Autor: Kachwala, A., Chubenko, O., Kim, D., Simakov, E. I., Karkare, S.

Publikováno v: Journal of Applied Physics; 12/14/2022, Vol. 132 Issue 22, p1-8, 8p

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Akademický článek

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers.

Autor: Kocyigit, Adem¹ (AUTHOR) adem.kocyigit@bilecik.edu.tr, Hussaini, Ali Akbar² (AUTHOR), Yıldırım, Murat² (AUTHOR), Kose, Dursun Ali³ (AUTHOR), Yıldız, Dilber Esra⁴ (AUTHOR) desrayildiz@hitit.edu.tr

Publikováno v: Applied Organometallic Chemistry. Nov2022, Vol. 36 Issue 11, p1-13. 13p.

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Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond.

Autor: Hiraiwa, Atsushi, Okubo, Satoshi, Ogura, Masahiko, Fu, Yu, Kawarada, Hiroshi

Publikováno v: Journal of Applied Physics; 9/28/2022, Vol. 132 Issue 12, p1-19, 19p

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Coupling of ferroelectric and valley properties in 2D materials.

Autor: Zheng, Jun-Ding, Zhao, Yi-Feng, Tan, Yi-Fan, Guan, Zhao, Zhong, Ni, Yue, Fang-Yu, Xiang, Ping-Hua, Duan, Chun-Gang

Publikováno v: Journal of Applied Physics; 9/28/2022, Vol. 132 Issue 12, p1-20, 20p

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Demonstration of nitrogen-incorporated ultrananocrystalline diamond photocathodes in a RF gun environment.

Autor: Chen, Gongxiaohui, Spentzouris, Linda, Jing, Chunguang, Conde, Manoel, Ha, Gwanghui, Liu, Wanming, Power, John, Wisniewski, Eric, Sumant, Anirudha V., Antipov, Sergey, Gomez, Edgar, Kovi, Kiran Kumar, Shao, Jiahang

Publikováno v: Applied Physics Letters; 10/26/2020, Vol. 117 Issue 17, p1-5, 5p

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Akademický článek

Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides.

Autor: Xu R; Department of Materials Science and NanoEngineering, Rice University, Houston, Texas, 77005, USA., Zhang Z; Department of Materials Science, Fudan University, Shanghai, 200433, China., Liang J; Department of Materials Science, Fudan University, Shanghai, 200433, China., Zhu H; Department of Materials Science and NanoEngineering, Rice University, Houston, Texas, 77005, USA.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Nov 28, pp. e2402139. Date of Electronic Publication: 2024 Nov 28.

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