Zobrazeno 1 - 10
of 165
pro vyhledávání: '"K K, Nanda"'
Autor:
Basanta Roul, Arun Malla Chowdhury, Malti Kumari, Kishan Lal Kumawat, Sujit Das, K. K. Nanda, S. B. Krupanidhi
Publikováno v:
Materials Advances. 4:596-606
Recently, two-dimensional (2D) semiconductor-based broadband photodetectors have gained tremendous attention due to their immense potential applications in high-performance optoelectronic devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e5729c2134e1074663c773eb27efda
https://doi.org/10.1039/d2ma00918h
https://doi.org/10.1039/d2ma00918h
Autor:
Rohit Pant, Deependra Kumar Singh, Arun Malla Chowdhury, Basanta Roul, K. K. Nanda, S. B. Krupanidhi
Publikováno v:
APL Materials, Vol 8, Iss 2, Pp 020907-020907-11 (2020)
Energy consumption is one of the most important aspects of any electronic device which needs further improvements in order to achieve a better sustainable future. This is equally true for commercially available photodetectors, which consume a lot of
Externí odkaz:
https://doaj.org/article/9db050da25ef4a7684b56ad9914d2fcc
Autor:
Basanta Roul, Deependra Kumar Singh, Arun Malla Chowdhury, Malti Kumari, Kishan Lal Kumawat, K. K. Nanda, S. B. Krupanidhi
Publikováno v:
IEEE Transactions on Electron Devices. 69:4355-4361
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7639039f54c0ecfdf931341a8da74782
https://doi.org/10.1109/ted.2022.3182283
https://doi.org/10.1109/ted.2022.3182283
Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate
Publikováno v:
Materials Advances. 3:6237-6245
InGaN epilayers with different indium concentrations have been grown on 100-nm-thick AlN/n-Si(111) template using plasma assisted molecular beam epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a95dc0fc955b280b3e3154f1c7555c93
https://doi.org/10.1039/d2ma00438k
https://doi.org/10.1039/d2ma00438k
Autor:
Shruti Mukundan, Lokesh Mohan, Greeshma Chandan, Basanta Roul, S. B. Krupanidhi, Satish Shinde, K. K. Nanda, R. Maiti, S. K. Ray
Publikováno v:
AIP Advances, Vol 5, Iss 3, Pp 037112-037112-9 (2015)
Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar hig
Externí odkaz:
https://doaj.org/article/fbbd9502d4b94fc08cca3484c4ab0bf8
Autor:
L. T. Singh, K. K. Nanda
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022103-022103-7 (2012)
We have investigated the current-voltage characteristics of carbon nanotube arrays and shown that the current through the arrays increases rapidly with applied voltage before the breakdown occurs. Simultaneous measurements of current and temperature
Externí odkaz:
https://doaj.org/article/aa48efa0fd9b4e3a9c6633c34540d101
Autor:
Vijendra Singh, Bhati, D, Sheela, Basanta, Roul, Ramesh, Raliya, Pratim, Biswas, Manish, Kumar, M S, Roy, K K, Nanda, S B, Krupanidhi, Mahesh, Kumar
Publikováno v:
Nanotechnology. 30(22)
Here, we demonstrate improved NO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::82fee6fdfda6d1324b71aec7f65db121
https://pubmed.ncbi.nlm.nih.gov/30699385
https://pubmed.ncbi.nlm.nih.gov/30699385
Publikováno v:
AIP Advances, Vol 3, Iss 8, Pp 082106-082106 (2013)
We report on multifunctional devices based on CNT arrays-ZnO nanowires hybrid architectures. The hybrid structure exhibit excellent high current Schottky like behavior with ZnO as p-type and an ideality factor close to the ideal value. Further the CN
Externí odkaz:
https://doaj.org/article/d4f1241eb9694bb2886a1830ada07713
Autor:
Sashi Kiran C, K. K. Nanda
Publikováno v:
Advanced Materials Letters. 4:22-25
Thermal grease is generally used as a thermal interface material for improved conduction between a heat source and heat sink. Here, we report the enhancement of thermal conductivity of commercially available off-the-shelf thermal grease (thermal comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e5daf648ac351455c294b6efce18c23
https://doi.org/10.5185/amlett.2013.icnano.327
https://doi.org/10.5185/amlett.2013.icnano.327
Autor:
S N Sahu and K K Nanda
Publikováno v:
Proceedings of Indian National Science Academy, Vol 67, Iss 1A (2015)
Nanostructure Semiconductors: Physics and Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::701de4c206a8c689755b73e467d32c25
https://insa.nic.in/writereaddata/UpLoadedFiles/PINSA/Vol67A_2001_1_Art06.pdf
https://insa.nic.in/writereaddata/UpLoadedFiles/PINSA/Vol67A_2001_1_Art06.pdf