Zobrazeno 1 - 6
of 6
pro vyhledávání: '"K J Reeson"'
It is demonstrated that a discrete buried layer of β SiC, with an epitaxial relationship to the silicon substrate, can be fabricated in 100 single crystal silicon using Ion Beam Synthesis (IBS) and high temperature annealing. This layer is formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ffd862312a2a57be7ed1f68b6d0b0a9
https://doi.org/10.1201/9781003069621-68
https://doi.org/10.1201/9781003069621-68
Autor:
C.D. Marsh, P. L. F. Hemment, R. J. Chater, K. J. Reeson, J.R. Davis, R. F. Peart, J. A. Iulner, C. D. Meekison, G.R. Booker
Publikováno v:
Radiation Effects. 99:71-81
To synthesise buried compound layers, reactive ions C+, N− and O2 + of energy 200 keV/atom were implanted into (100) single crystal silicon at approximately 500°C. Implanted specimens were annealed at high (≥ 1200°C) temperatures. Rutherford ba
Autor:
McKinty, C. N., Kewell, A. K., Sharpe, J. S., Lourenco, M. A., Butler, T. M., Valizadeh, R., Colligon, J. S., Kirkby, K. J. Reeson, Homewood, K. P.
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B; 2000, Vol. 161 Issue: 1 p922-925, 4p
Autor:
Sharpe, J. S., Chen, Y. L., Gwilliam, R. M., Kewell, A. K., Ledain, S., McKinty, C. N., Lourenco, M. A., Butler, T., Homewood, K. P., Kirkby, K. J. Reeson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B; 2000, Vol. 161 Issue: 1 p937-940, 4p
Autor:
Kewell, A. K., Lourenco, M. A., russell gwilliam, Sharpe, J., Mckinty, C., Butler, T., Kirkby, K. J. Reeson, Homewood, K. P.
Publikováno v:
University of Manchester-PURE
Scopus-Elsevier
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0470aa8892a15a48eb878b1c94360a0a
https://research.manchester.ac.uk/en/publications/c2334216-a477-4ce1-b3ad-cf3115a0deaa
https://research.manchester.ac.uk/en/publications/c2334216-a477-4ce1-b3ad-cf3115a0deaa