Zobrazeno 1 - 10
of 16
pro vyhledávání: '"K J Morse"'
Publikováno v:
New Journal of Physics, Vol 23, Iss 10, p 103008 (2021)
Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O -band
Externí odkaz:
https://doaj.org/article/999360a9d4b24e9a9b973ca502501aa2
Autor:
L. Bergeron, C. Chartrand, A. T. K. Kurkjian, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, S. Simmons
Publikováno v:
PRX Quantum, Vol 1, Iss 2, p 020301 (2020)
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface that possesses, simultaneously, long coherence lif
Externí odkaz:
https://doaj.org/article/5ee6aa1372e44efaad609a33924759e8
Autor:
K. J. Morse, A. Kurkjian, Nickolay Abrosimov, C. Chartrand, Helge Riemann, Hans-Joachim Pohl, L. Bergeron, Peter Becker, Stephanie Simmons, M. L. W. Thewalt
Publikováno v:
PRX Quantum. 1
A silicon color center is identified and characterized revealing a long-lived and robust photon-spin interface suitable for engineering quantum technologies.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a573eb84a63dd75cc359ee8fe450c1bd
https://doi.org/10.1103/prxquantum.1.020301
https://doi.org/10.1103/prxquantum.1.020301
Autor:
Evan MacQuarrie, Daniel B. Higginbottom, S. Roorda, Stephanie Simmons, C. Chartrand, V. A. Karasyuk, K. J. Morse
Publikováno v:
New Journal of Physics. 23:103008
Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be296fedae02d2304c44aae9c64d78cd
https://doi.org/10.1088/1367-2630/ac291f
https://doi.org/10.1088/1367-2630/ac291f
Autor:
Nikolay V. Abrosimov, Helge Riemann, Rohan J. S. Abraham, Peter B. Becker, Mike L. W. Thewalt, Stephanie Simmons, K. J. Morse, Hans-Joachim Pohl, Camille Bowness, Adam DeAbreu, Alzbeta Medvedova
Publikováno v:
Physical Review Applied. 11
Silicon doped with Se${}^{+}$ is particularly compelling as a spin-photon interface, because it could be the basis of all-silicon, hybrid spin-photon quantum information technology. This study pins down the most critical spin-photon properties of Si:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af02045a54239dfce24a25eddd262941
https://doi.org/10.1103/physrevapplied.11.044036
https://doi.org/10.1103/physrevapplied.11.044036
Autor:
H.-J. Pohl, Peter Becker, K. J. Morse, Stephanie Simmons, C. Chartrand, L. Bergeron, Nickolay Abrosimov, Helge Riemann, M. L. W. Thewalt
Publikováno v:
Physical Review B. 98
Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of ot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23dfb3099bd8cec9d75db0722c295b74
https://doi.org/10.1103/physrevb.98.195201
https://doi.org/10.1103/physrevb.98.195201
Autor:
K. J. Morse, M. L. W. Thewalt, Yu. A. Astrov, V. B. Shuman, Nickolay Abrosimov, S.G. Pavlov, L. M. Portsel, Stephanie Simmons, A. N. Lodygin, Heinz-Wilhelm Hübers, Adam DeAbreu, Rohan J. S. Abraham
We use the greatly improved optical linewidths provided by highly enriched $^{28}$Si to study a photoluminescence line near 1017 meV previously observed in the luminescence spectrum of natural Si diffused with Mg, and suggested to result from the rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fccc758af79aa5b4a8196c02465d71b4
http://arxiv.org/abs/1810.00095
http://arxiv.org/abs/1810.00095
Autor:
K. J. Morse, Adam DeAbreu, Yu. A. Astrov, A. N. Lodygin, Heinz-Wilhelm Hübers, Mike L. W. Thewalt, Rohan J. S. Abraham, V. B. Shuman, Stephanie Simmons, S.G. Pavlov, L. M. Portsel, Nickolay Abrosimov
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical properties which may enable a spin/photonic quantum technology. The interstitial magnesium impurity (Mg$_i$) in silicon is also a deep double donor but
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc236d79e7b9f6764b1b9509e0d91244
http://arxiv.org/abs/1806.01965
http://arxiv.org/abs/1806.01965
Autor:
Julian Huber, K. J. Morse, K. Saeedi, Nikolay V. Abrosimov, Peter B. Becker, Phillip Dluhy, Mike L. W. Thewalt, Hans-Joachim Pohl, Stephanie Simmons, Helge Riemann, Jeff Z. Salvail
Publikováno v:
Physical Review B. 97
Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simulta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3868e215b140ded54ef4a58c8ad4e1dc
https://doi.org/10.1103/physrevb.97.115205
https://doi.org/10.1103/physrevb.97.115205
Autor:
Camille Bowness, Hans-Joachim Pohl, K. J. Morse, Timothy S. Richards, Mike L. W. Thewalt, Adam DeAbreu, Helge Riemann, Stephanie Simmons, Rohan J. S. Abraham, Nikolay V. Abrosimov, Peter Becker
Publikováno v:
Science Advances
Chalcogen donors in silicon enable a scalable photonic cavity quantum electrodynamics solution for universal quantum computing.
Donor spins in silicon are highly competitive qubits for upcoming quantum technologies, offering complementary metal-
Donor spins in silicon are highly competitive qubits for upcoming quantum technologies, offering complementary metal-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2df9d6722c9068cfb10c332ac1915d9
https://doi.org/10.1126/sciadv.1700930
https://doi.org/10.1126/sciadv.1700930