Zobrazeno 1 - 5
of 5
pro vyhledávání: '"K J, Soda"'
Publikováno v:
Journal of morphology. 278(1)
Over the past few decades, geometric morphometric methods have become increasingly popular and powerful tools to describe morphological data while over the same period artificial neural networks have had a similar rise in the classification of specim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6c59177cdf68d66fa01671666a0f7f80
https://pubmed.ncbi.nlm.nih.gov/27892600
https://pubmed.ncbi.nlm.nih.gov/27892600
Publikováno v:
Journal of Applied Physics. 51:4399-4404
Photoluminescence studies and emission profiling are used to evaluate the effectiveness of swept (as opposed to rastered) electron beams in activating ion implanted nitrogen in GaAs1−xPx . Both direct‐ and indirect‐gap compositions are studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::431b46c565262dd89ff0e5d21e60870b
https://doi.org/10.1063/1.328260
https://doi.org/10.1063/1.328260
Autor:
K. J. Soda, C. E. Barnes
Publikováno v:
IEEE Transactions on Nuclear Science. 23:1664-1670
The effect of gamma irradiation on the electrical and optical properties of amphoterically Si-doped GaAs LEDs has been investigated. The lifetime-damage constant product, tau/sub 0/K/sub ..gamma../, for degradation of the light output at constant low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c3a68566a57db5742625efba15fcd2
https://doi.org/10.1109/tns.1976.4328559
https://doi.org/10.1109/tns.1976.4328559
Publikováno v:
IEEE Transactions on Nuclear Science. 22:2475-2481
The effects of gamma radiation on optical isolators have been investigated. This study has included the simultaneous irradiation and measurement of the individual emitters and detectors making up the isolators. In this manner, the net effect of irrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82e13b957c725d0afdb8e7af126cbd07
https://doi.org/10.1109/tns.1975.4328153
https://doi.org/10.1109/tns.1975.4328153
Publikováno v:
MRS Proceedings. 1
It is demonstrated that swept-line electron beam (SLEB) annealing can be successfully employed to recrystallize relatively deep (∼0.5 μm) Si-implanted amorphous silicon layers. DLTS and C-V analysis of these layers show significant reductions in c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76ba4d54e0f19f539a599c7ff9cb5302
https://doi.org/10.1557/proc-1-353
https://doi.org/10.1557/proc-1-353