Zobrazeno 1 - 10
of 132
pro vyhledávání: '"K Haberland"'
Publikováno v:
tm - Technisches Messen. 84:747-752
Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materials for the LED lighting industry. Recently, a photoluminescence (PL) technique for direct in-situ characterization of GaN and InGaN layers during epit
Publikováno v:
Journal of Crystal Growth. 415:1-6
In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contai
Autor:
S. Fritze, Jonas Hennig, I. Daumiller, Alois Krost, K. Haberland, U. Heinle, Hartmut Witte, Armin Dadgar, A. Diez, O. Schulz, Jürgen Bläsing, Mike Kunze
Publikováno v:
Journal of Crystal Growth. 370:278-281
The growth of GaN-based transistor structures on silicon substrates requires strain engineering to compensate tensile thermal stress upon cooling and prevent crack formation. For high compressive stress during growth, required for thick GaN layers, p
Publikováno v:
SPIE Proceedings.
Development and manufacturing of LED structures is still driven by production cost reduction and performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role in view of further yield improvement and process op
Publikováno v:
Journal of The Electrochemical Society. 159:H811-H815
Autor:
Günther Tränkle, Michael Kneissl, Veit Hoffmann, Arne Knauer, Markus Weyers, C. Brunner, J.-T. Zettler, Sven Einfeldt, K. Haberland
Publikováno v:
Journal of Crystal Growth. 315:5-9
Wafer bowing has a strong impact on the wavelength homogeneity of InGaN based light emitters due to the strong temperature dependence of the In incorporation. Using in-situ curvature measurements and pyrometry we have studied the impact of growth con
Autor:
R. Steins, Hilde Hardtdegen, Y. S. Cho, K. Haberland, J.-T. Zettler, Zdeněk Sofer, Martin Zorn, N. Kaluza
Publikováno v:
physica status solidi (b). 242:2581-2586
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth parameter variations on the surface temperature. The effect
Publikováno v:
physica status solidi (b). 242:2570-2574
We present an in situ method for the simultaneous determination of wafer curvature and true growth temperature during metalorganic vapor phase epitaxy of group-III-nitrides on silicon. The measurement configuration allows determining the wafer curvat
Publikováno v:
Materials Science Forum. :1051-1056
Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical et
Autor:
F. Schulze, Gunther Dr.rer.nat. Straßburger, A. Diez, R. Clos, Armin Dadgar, Jürgen Bläsing, Alois Krost, K. Haberland, Thomas Zettler
Publikováno v:
Journal of Crystal Growth. 272:72-75
In heteroepitaxy stress, either intrinsic or thermal, is a commonly observed phenomena. We have investigated in detail stress during metal organic chemical vapor-phase epitaxy of GaN on sapphire and silicon in situ by a curvature measurement techniqu