Zobrazeno 1 - 10
of 74
pro vyhledávání: '"K G Lisunov"'
Autor:
L. Dermenji, Ernest Arushanov, D. L. Goroshko, E.A. Chusovitin, Nikolay G. Galkin, K. G. Lisunov, Konstantin N. Galkin
Publikováno v:
Solid State Phenomena. 312:3-8
Resistivity, r (T), and Hall coefficient in weak (B < 1 T) magnetic fields, R (T), are investigated in Ca2Si and CaSi2 films at temperatures T between ~ 20 - 300 K. In CaSi2, r (T) is typical of metals increasing with T within the whole temperature r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c31a08dcede4dc91e97eedc20083d2
https://doi.org/10.4028/www.scientific.net/ssp.312.3
https://doi.org/10.4028/www.scientific.net/ssp.312.3
Autor:
K. G. Lisunov, Maxim Guc, Susan Schorr, E. Hajdeu-Chicarosh, Ernest Arushanov, Galina Gurieva
Publikováno v:
Journal of Materials Research and Technology, Vol 13, Iss, Pp 2251-2259 (2021)
One of the major reasons for a recent stuck of the development of kesterite based photovoltaic devices is related to the problems in their open circuit voltage. Several limitations can be pointed out as a possible origin. In particular, for a case of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b7f20df0021eff7e7a598f64cc97803
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=104373
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=104373
Autor:
S. Levcenko, E. Hajdeu-Chicarosh, Erkki Lähderanta, Maxim Guc, M. A. Shakhov, K. G. Lisunov, Ernest Arushanov, I. Zakharchuk
Publikováno v:
Solar Energy. 172:184-190
The quaternary chalcogenides, attracting much attention in recent time as promising solar energy materials, permit an effective optimization of their composition by the Ge incorporation. In particular, this implies an interest to the Cu2ZnGeS4 compou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd0fba1d9ae4220e2363edc29b7878a
https://doi.org/10.1016/j.solener.2018.04.043
https://doi.org/10.1016/j.solener.2018.04.043
Autor:
Erkki Lähderanta, K. G. Lisunov, Sergiu Levcenko, Ernest Arushanov, M. A. Shakhov, I. Zakharchuk, Maxim Guc, E. Hajdeu-Chicarosh
Publikováno v:
Journal of Magnetism and Magnetic Materials. 459:246-251
Transport properties of the kesterite-like single crystals of Cu2ZnSnS4, Cu2ZnSnxGe1−xSe4 and Cu2ZnGeS4 are investigated in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping (VRH) conduction is established by investigations of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8342167522798616262d85fbf321f06
https://doi.org/10.1016/j.jmmm.2017.10.094
https://doi.org/10.1016/j.jmmm.2017.10.094
Autor:
K. G. Lisunov, Galina Gurieva, Ernest Arushanov, Susan Schorr, Maxim Guc, K. Neldner, E. Hajdeu-Chicarosh
Publikováno v:
Journal of Alloys and Compounds. 703:315-320
The resistivity, ρ( T ), of Cu 2 ZnSnS 4 powder samples, obtained by a solid-state reaction method from pure elements, exhibits an activated character. The Mott variable-range hopping charge transfer is observed between T ∼100–230 K, followed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360d0877f5b3608f19aef3b47bb7fbca
https://doi.org/10.1016/j.jallcom.2017.01.352
https://doi.org/10.1016/j.jallcom.2017.01.352
Autor:
K. G. Lisunov, M. A. Shakhov, Ernest Arushanov, Maxim Guc, Erkki Lähderanta, E. Hajdeu-Chicarosh
Publikováno v:
Surface Engineering and Applied Electrochemistry. 53:186-195
The resistivity, ρ(T), and the magnetoresistance (MR) of Cu2ZnSnS4 (CZTS) single crystals are investigated at temperatures T = 2–300 K in pulsed magnetic fields of B up to 20 T. The Mott variable–range hopping (VRH) conductivity over localized s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70422217f188a1778293fdcc7e9a156f
https://doi.org/10.3103/s1068375517020053
https://doi.org/10.3103/s1068375517020053
Autor:
Vladimir Nicolaevich Stamov, Alexander A. Lebedev, M. A. Shakhov, S. P. Lebedev, K. G. Lisunov, Erkki Lähderanta
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 32(11)
Resistivity, ρ(T), and magnetoresistance (MR) are investigated in graphene grown on SiC (0 0 0 1), at temperatures between T ~ 4-85 K in pulsed magnetic fields of B up to 30 T. According to the Raman spectroscopy and Kelvin-probe microscopy data, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4906e6443868586c4b32f05f307445be
https://pubmed.ncbi.nlm.nih.gov/31770736
https://pubmed.ncbi.nlm.nih.gov/31770736
Autor:
Erkki Lähderanta, K. G. Lisunov, I. Zakharchuk, M. A. Shakhov, Maxim Guc, E. Hajdeu-Chicarosh, I. V. Bodnar, Ernest Arushanov
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-11 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-11 (2018)
Resistivity, ρ(T), and magnetoresistance (MR) are investigated in the Cu2ZnSnxGe1−xS4 single crystals, obtained by the chemical vapor transport method, between x = 0–0.70, in the temperature range of T ~ 50–300 K in pulsed magnetic field of B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64f829d1f9f1d269a131d15a55bec7eb
http://europepmc.org/articles/PMC6269520
http://europepmc.org/articles/PMC6269520
Autor:
A. V. Kochura, Erkki Lähderanta, K. G. Lisunov, B. A. Aronzon, L. N. Oveshnikov, E. I. Yakovleva
Publikováno v:
JETP Letters. 101:130-135
We study InSb:Mn polycrystals with different values of the Mn content. In these samples, two ferromagnetic phases have been found: MnSb nanoinclusions with TC ≈ 600 K and an InMnSb magnetic host with TC below 10 K. The magnetic field dependence obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbab610a003b4b7db38645b73a82a6e1
https://doi.org/10.1134/s0021364015020149
https://doi.org/10.1134/s0021364015020149
Autor:
Sergiu Levcenko, I. Zakharchuk, Maxim Guc, M. A. Shakhov, Erkki Lähderanta, E. Hajdeu-Chicarosh, K. G. Lisunov, Ernest Arushanov
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-13 (2017)
Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu2ZnGeS4, deeper investigations of its transport properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46fe856053f77d3d419ba6f852fe04a9
https://doi.org/10.1038/s41598-017-10883-0
https://doi.org/10.1038/s41598-017-10883-0